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A zinc oxide thin film for solar battery and manufacture method

A zinc oxide thin film and solar cell technology, applied in the field of solar cells, can solve the problems of complex preparation method, unfavorable scale production, poor current characteristics, etc., and achieves the effects of simple process, low cost, and reduced compounding

Inactive Publication Date: 2007-05-16
BEIJING INSTITUTE OF TECHNOLOGYGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In the literature reports on its photoelectric response ability, most of them can only use ultraviolet light as the excitation light source, and the preparation methods are very complicated, the response time is long, the current characteristics are poor, the preparation is cumbersome and it is not conducive to large-scale production.
[0003] There are few reports on the preparation of zinc oxide thin films by magnetron sputtering and the study of their photoelectric conversion properties

Method used

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  • A zinc oxide thin film for solar battery and manufacture method

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Comparison scheme
Effect test

Embodiment 1

[0019] Embodiment 1: adopt radio frequency magnetron sputtering to prepare zinc oxide film, substrate adopts the glass (resistivity 5 * 10 -4 Ω·cm), respectively, after six steps of ultrasonic cleaning with detergent, deionized water, acetone, deionized water, alcohol, and deionized water, each for 10 minutes. The target material is a sintered zinc oxide ceramic target (purity is 99.99%, diameter is three inches), and the distance between the target and the substrate is 10 cm. The back vacuum of the sputtering chamber is 5×10 -4 Pa. The working gas is argon (99.99% pure), and the gas flow is controlled at 50 sccm. The sample holder keeps rotating to improve the uniformity of the film. The working pressure is 0.6 Pa, the substrate temperature is 250° C., the sputtering power is 150 W, and the sputtering time is 120 minutes. The test bias voltage is 60mV, and the photocurrent intensity of the double-layer thin film is 15μA.

Embodiment 2

[0020] Embodiment 2: adopt radio frequency magnetron sputtering to prepare zinc oxide film, substrate adopts the glass (resistivity 5 * 10 -4 Ω·cm), respectively, after six steps of ultrasonic cleaning with detergent, deionized water, acetone, deionized water, alcohol, and deionized water, each for 10 minutes. The target material is a sintered zinc oxide ceramic target (purity is 99.99%, diameter is three inches), and the distance between the target and the substrate is 12 cm. The back vacuum of the sputtering chamber is 5×10 -4 Pa. The working gas is argon (99.99% pure), and the gas flow is controlled at 50 sccm. The sample holder keeps rotating to improve the uniformity of the film. The working pressure is 0.8 Pa, the substrate temperature is 150° C., the sputtering power is 200 W, and the sputtering time is 100 minutes. The test bias is 60mV. The measured photocurrent intensity of the double-layer thin film is 10 μA.

Embodiment 3

[0021] Embodiment 3: adopt radio frequency magnetron sputtering to prepare zinc oxide thin film, substrate adopts the glass (resistivity 5 * 10 -4 Ω·cm), respectively, after six steps of ultrasonic cleaning with detergent, deionized water, acetone, deionized water, alcohol, and deionized water, each for 10 minutes. The target material is a sintered zinc oxide ceramic target (purity is 99.99%, diameter is three inches), and the distance between the target and the substrate is 15 cm. The back vacuum of the sputtering chamber is 5×10 -4 Pa. The working gas is argon (99.99% pure), and the gas flow is controlled at 50 sccm. The sample holder keeps rotating to improve the uniformity of the film. The working pressure is 2 Pa, the substrate temperature is 350° C., the sputtering power is 150 W, and the sputtering time is 60 minutes. The test bias is 60mV. The measured photocurrent intensity of the double-layer thin film is 6.5μA.

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Abstract

The provided simple preparation method for nano ZnO film refers to magnetron sputtering on glass / ITO (In2O3: Sn) or silicon substrate. The product has supper full solar waveband photovoltaic and photoelectric properties. This invention is low cost and fit to production in scale, and has well application future.

Description

technical field [0001] The invention is a zinc oxide thin film with photoelectric response capability in the full sunlight band, which is used for solar cells. The thin film has a strong photoelectric conversion capability in the full sunlight band, and involves solar cell materials, photovoltaic materials, and electronic materials. technical background [0002] Zinc oxide materials have shown great advantages in the fields of ultraviolet light detection and photoresistors. In the literature reports on its photoelectric response ability, most of them can only use ultraviolet light as the excitation light source, and the preparation methods are very complicated, the response time is long, the current characteristics are poor, the preparation is cumbersome and it is not conducive to large-scale production. [0003] There are few reports on the preparation of zinc oxide thin films by magnetron sputtering and the study of their photoelectric conversion properties. In the inven...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/02H01L31/042H01L31/18C23C14/34H01L31/032
CPCY02E10/50Y02P70/50
Inventor 曹传宝张金星
Owner BEIJING INSTITUTE OF TECHNOLOGYGY
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