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Composite material and preparation method thereof and quantum dot light emitting diode

A technology of quantum dot light-emitting and composite materials, applied in the field of optoelectronic display, can solve the problems of bottom transmission efficiency, unbalanced injection of electrons and holes, etc., and achieve the effect of improving hole transport capability, balanced injection, and good performance stability.

Inactive Publication Date: 2020-06-02
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a composite material and its preparation method, which aims to solve the problem of unbalanced injection of electrons and holes in the existing quantum dot light-emitting diodes due to the disclosure of the transmission efficiency of the material of the hole transport layer.

Method used

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preparation example Construction

[0030] Correspondingly, an embodiment of the present invention provides a method for preparing a composite material, comprising the following steps: providing a metal phthalocyanine compound and a nano-carbon material, wherein the metal phthalocyanine compound and the nano-carbon material are in a mass ratio of 1: 1 to 1:10 ratio for mixing treatment.

[0031] The preparation method of the composite material provided by the embodiment of the present invention only needs to be mixed according to the mass ratio of the two, and the process is simple and the method is highly controllable.

[0032] In the embodiment of the present invention, the selection and preference of the metal phthalocyanine compound and the nano-carbon material can be referred to above.

[0033] Preferably, the nano-carbon material is selected from one or more of graphene oxide, graphene, carbon fiber, and carbon nanotube.

[0034] Preferably, the metal phthalocyanine compound is selected from one or more o...

Embodiment 1

[0065] A quantum dot light emitting diode device includes a substrate, a quantum dot light emitting diode electronic component combined on the substrate, and an encapsulation film for packaging the quantum dot light emitting diode electronic component. The structure of the quantum dot light-emitting diode includes an ITO substrate and a silver electrode arranged oppositely, and a laminated structure arranged between the ITO substrate and the silver electrode, and the laminated structure is a copper phthalocyanine compound / doped Miscellaneous graphene oxide composite film (50nm) / quantum dot luminescent layer (20nm) / zinc oxide (30nm), wherein, copper phthalocyanine compound / doped graphene oxide composite film is combined on the surface of ITO pole, and zinc oxide is combined on silver electrode surface.

[0066] The preparation method of the quantum dot light-emitting diode is:

[0067] An anode with a thickness of 30nm is deposited on the bottom surface by magnetron sputtering...

Embodiment 2

[0074] A quantum dot light emitting diode device, comprising a substrate, a quantum dot light emitting diode electronic component combined on the substrate and an encapsulation film for packaging the quantum dot light emitting diode electronic component. The structure of the quantum dot light-emitting diode includes an ITO substrate and a silver electrode arranged oppositely, and a stacked structure arranged between the ITO substrate and the silver electrode, and the stacked structure is sequentially stacked and combined zinc oxide (30nm) / Quantum dot luminescent layer (20nm) / copper phthalocyanine compound / doped graphene oxide composite film (30nm), wherein, the copper phthalocyanide compound / doped graphene oxide composite film is combined on the silver electrode surface, and zinc oxide is combined on the ITO surface.

[0075] The preparation method of the quantum dot light-emitting diode is:

[0076] Using magnetron sputtering to deposit a cathode with a thickness of 30nm on...

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Abstract

The invention provides a composite material. The composite material comprises a metal phthalocyanine compound and a nanocarbon material, and the mass ratio of the metal phthalocyanine compound to thenanocarbon material is 1:1 to 1:10. The composite material provided by the invention comprises a metal phthalocyanine compound and a nano carbon material. The metal phthalocyanine compound has a large[pi] bond conjugated system and easily delocalized pi electrons, has a large optical nonlinear coefficient and short photoelectric response time, and can be used as a hole transport material; and good structural stability is achieved.

Description

technical field [0001] The invention belongs to the field of photoelectric display technology, and in particular relates to a composite material and a preparation method thereof, a quantum dot light-emitting diode and a preparation method thereof. Background technique [0002] In recent years, with the rapid development of display technology, quantum dot light-emitting diodes (QLEDs), which use semiconductor quantum dot materials as the light-emitting layer, have attracted extensive attention. Due to the good characteristics of high color purity, high luminous efficiency, adjustable luminous color and stable device, quantum dot light-emitting diodes have broad application prospects in flat panel display, solid-state lighting and other fields. [0003] QLED devices can improve device performance (including device efficiency and lifetime) through material improvement. Traditional quantum dot light-emitting diode device structure [substrate (glass, flexible material) / transpare...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K85/20H10K85/221H10K85/311H10K50/15H10K2102/00H10K71/00
Inventor 朱佩向超宇罗植天张滔李乐
Owner TCL CORPORATION
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