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ESD protection element

An ESD protection and component technology, applied in electrical components, electrical solid-state devices, semiconductor devices, etc., can solve the problem of not being able to form a high-pass filter into one chip, etc.

Inactive Publication Date: 2007-06-06
KK TOSHIBA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the conventional high-pass filter for filtering low-frequency signals cannot be configured as a single chip

Method used

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Examples

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Embodiment 1

[0048] Embodiment 1 will be described with reference to FIG. 1 and FIG. 2 .

[0049] FIG. 1 is an equivalent circuit diagram of the ESD protection element of this embodiment, and FIG. 2 is a cross-sectional view of main parts of the ESD protection element of this embodiment. As shown in FIG. 1 , a diode (bidirectional Zener diode) 50 and a resistor 6 constituting an ESD protection element are connected between a signal input (VIN) and a signal output (VOUT). One end of the resistor 6 is connected to one end of the diode 50, and the other end is grounded (GND).

[0050] As shown in FIG. 2, the silicon semiconductor substrate 10 is made of N + Type high-concentration layer 1 and P-type silicon epitaxial layer 2 formed on high-concentration layer 1 . The impurity concentration of the high-concentration layer 1 is greater than or equal to 1×10 19 / cm 3 , the impurity concentration of P-type silicon epitaxial layer 2 is 1×10 15 ~1×10 17 / cm 3 about. An input signal electrod...

Embodiment 2

[0055] Next, Embodiment 2 will be described with reference to FIG. 3 .

[0056] FIG. 3 is a cross-sectional view of the ESD protection element of this embodiment. As shown in FIG. 3 , a diode (bidirectional Zener diode) 60 constituting an ESD protection element and an output signal electrode 29 are connected between the signal input (VIN) and the signal output (VOUT). One end of the output signal electrode 29 is connected to one end of the diode 60, and the other end is connected to the N + On the high-concentration impurity diffusion region 26 . The silicon semiconductor substrate 20 is made of N + type high concentration layer 22 and the N formed on the high concentration layer 22 - Silicon epitaxial layer 21 is formed. The impurity concentration of the high concentration layer 22 is greater than or equal to 1×10 19 / cm 3 , N - The impurity concentration of the silicon epitaxial layer 21 is less than or equal to 1×10 14 / cm 3 about. An input signal electrode 28 and...

Embodiment 3

[0064] Next, Embodiment 3 will be described with reference to FIG. 4 .

[0065] FIG. 4 is a cross-sectional view of the ESD protection element of this embodiment. As shown in FIG. 4 , a diode (bidirectional Zener diode) 70 constituting an ESD protection element and an output signal electrode 39 are connected between the signal input (VIN) and the signal output (VOUT). One end of the output signal 39 is connected to one end of the diode 70, and the other end is connected to the N + On the high-concentration impurity diffusion region 36 .

[0066] The silicon semiconductor substrate 30 is made of N + type high concentration layer 32, the N formed on the high concentration layer 32 - Si epitaxial layer 31 and formed on the N - The P-type silicon epitaxial layer 41 on the silicon epitaxial layer 31 is formed. The impurity concentration of the high concentration layer 32 is greater than or equal to 1×10 19 / cm 3 , N - The impurity concentration of the silicon epitaxial laye...

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Abstract

An ESD protection device includes: a semiconductor substrate of a first conductivity type having a first major surface and a second major surface; a signal input electrode formed on the first major surface of the semiconductor substrate; a base region of a second conductivity type formed on a surface region of the second major surface of the semiconductor substrate; a diffusion region of the first conductivity type; a resistor layer formed on the second major surface of the semiconductor substrate of the first conductivity type; a signal output electrode electrically connected to the diffusion region of the first conductivity type; and a ground electrode electrically connected to the resistor layer. The diffusion region is selectively formed on a surface region of the base region of the second conductivity type in the semiconductor substrate of the first conductivity type. The resistor layer is electrically connected to the diffusion region of the first conductivity type.

Description

technical field [0001] The present invention relates to ESD (electrostatic discharge) protection components. Background technique [0002] Conventionally, an ESD protection diode incorporating an EMI filter for filtering high-frequency signals has been formed by inserting an ESD protection diode in parallel between a signal line and a ground electrode, and inserting a resistor between the cathodes of the diode. However, the conventional high-pass filter for filtering low-frequency signals cannot be configured as a single chip. Conventionally, such a high-pass filter has been constructed by disposing individual electronic components such as diodes and resistors on a mounting substrate such as a printed circuit board. [0003] As a prior art, Patent Document 1 describes that, in a surge protection structure connected between two input terminals and two output terminals, and the output terminals are input-connected to a protection circuit, the second 1. The input terminal is ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/02H01L23/60
CPCH01L27/0255
Inventor 井上智树
Owner KK TOSHIBA
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