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Method for making silicon-base micro-mechanical adjustable light wave-filter with wide frequency domain

A manufacturing method and optical filter technology, which are applied in the fields of instruments, optics, nonlinear optics, etc., can solve the problems of unfavorable manufacturing of optical devices, low working stability, and difficult thickness control.

Inactive Publication Date: 2007-06-13
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
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  • Claims
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Problems solved by technology

However, as a polymer, polyimide has low working stability and is greatly affected by temperature and humidity; and its thickness is not easy to control, which is extremely unfavorable for the production of optical devices

Method used

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  • Method for making silicon-base micro-mechanical adjustable light wave-filter with wide frequency domain
  • Method for making silicon-base micro-mechanical adjustable light wave-filter with wide frequency domain
  • Method for making silicon-base micro-mechanical adjustable light wave-filter with wide frequency domain

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Experimental program
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Embodiment Construction

[0030] Please refer to Fig. 3A-I, a manufacturing method of a silicon-based micro-mechanical tunable optical filter with a wide frequency domain according to the present invention adopts a low-temperature surface micro-mechanical process, and the entire process temperature does not exceed 300°C; the manufacturing method includes the following steps:

[0031] a) Make a first electrode 101 on the substrate 100, this electrode is one of the electrode plates that generate electrostatic attraction, and make an electrode lead-out hole 102 in the electrode layer, the first electrode 101 is a highly doped n-region , highly doped p region;

[0032] b) making a first reflector 110 on the first electrode 101, which is one of the necessary reflectors for the filter;

[0033] c) Make a sacrificial layer 121 on the first reflector 110. The thickness of the sacrificial layer determines the working mode of the filter. When released, the air cavity formed constitutes the resonant cavity of the...

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Abstract

The invention is a wide-frequency domain, silicon-micromachined, tunable filter making method, comprising the steps of: making a first electrode on a substrate and making electrode lead wire outlet in electrode layer; making a first reflector on the first electrode, one of the necessary reflectors for the filter; making a sacrificial layer on the first reflector and making a second reflector on the sacrificial layer, where the two reflectors as well as an air cavity formed after the release of the sacrificial layer form a filtering-mode selecting structure; making a second electrode and a stress control film layer on the second reflector; corroding and releasing the sacrificial layer to form the air cavity, where when a voltage is applied between the two electrodes, the thickness of the air cavity changes because of static absorption and the transmission mode of the filter changes with the change of the thickness of the air cavity, so that the filter has an adjustable-wavelength mode- selecting effect.

Description

technical field [0001] The invention relates to a method for manufacturing a wide-frequency domain tunable optical filter, in particular to a method for manufacturing a silicon-based micro-mechanical tunable optical filter with a wide frequency range manufactured by surface micro-mechanical technology. Background technique [0002] With the urgent demand for high-speed and large-capacity communication networks such as Internet access, high-quality image transmission, and multimedia technology, DWDM has become an important technology in current point-to-point networks, and narrower frequency intervals and more multiplexing Channels have always been people's relentless pursuit. [0003] The core device to realize dense wavelength division multiplexing (DWDM) is multiplexer and demultiplexer (mux / demux), and the dense wavelength division multiplexing of 50GHz depends on a brand new device Interleaver. The main application of tunable filters is to form various demultiplexers to...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/015G02F1/01
Inventor 左玉华毛容伟王良臣成步文余金中王启明
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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