Active atom beam spraying DC discharging process for preparing nano carbon nitride film

A DC discharge, nano-film technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve problems such as damage

Inactive Publication Date: 2007-06-27
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, plasma-assisted chemical vapor deposition technology cannot avoid high substrate temperature (nearly 800 degrees Celsius), which will cause damage to most substrate materials, especially sensitive substrate materials.

Method used

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  • Active atom beam spraying DC discharging process for preparing nano carbon nitride film
  • Active atom beam spraying DC discharging process for preparing nano carbon nitride film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] The parameters of the preparation process are as follows:

[0041] Cathode-anode spacing: 0.6 cm, anode lead-out hole size: length 0.12 cm, diameter 0.2 cm, deposition chamber background vacuum: 10 -7 Torr, atomic beam source pressure: 30 Torr, deposition chamber pressure: 3 Torr, discharge current: 200 mA, discharge voltage: 150 V, Co / Ni transition layer thickness: 50 nm, methane / nitrogen: 1 / 50 deposition rate: 0.07 microns / min.

[0042] Composition structure index of synthetic carbon nitride nano film:

[0043] The film is composed of uniform and dense spherical grains;

[0044] The average grain size is 30-50 nanometers;

[0045] β-C in film 3 N 4 and graphite phase C 3 N 4 Composition ratio 4.5:1;

[0046] The composition of graphite and amorphous carbon in the film is less than 5%.

Embodiment 2

[0048] The parameters of the preparation process are as follows:

[0049] Cathode-anode spacing: 0.6 cm, anode lead-out hole size: length 0.12 cm, diameter 0.2 cm, deposition chamber background vacuum: 10 -7 Torr, atomic beam source pressure: 30 Torr, deposition chamber pressure: 3 Torr, discharge current: 200 mA, discharge voltage: 150 V, Co / Ni transition layer thickness: 50 nm, methane / nitrogen: 1 / 10, deposition rate : 0.11 μm / min.

[0050] Composition structure index of synthetic carbon nitride nano film:

[0051] The film is composed of uniform and dense spherical grains;

[0052] The average grain size is 30-50 nanometers;

[0053] β-C in film 3 N 4 and graphite phase C 3 N 4 The composition ratio is 2:1;

[0054] The composition of graphite and amorphous carbon in the film is about 10%.

Embodiment 3

[0056] Cathode-anode spacing: 0.6 cm, anode lead-out hole size: length 0.12 cm, diameter 0.2 cm, deposition chamber background vacuum: 10 -7 Torr, atomic beam source pressure: 30 Torr, deposition chamber pressure: 3 Torr, discharge current: 200 mA, discharge voltage: 150 V, Co / Ni transition layer thickness: 25 nm, methane / nitrogen: 1 / 50, deposition rate : 0.05 μm / min.

[0057] Composition structure index of synthetic carbon nitride nano film:

[0058] The film is composed of uniform and dense spherical grains;

[0059] The average grain size is 20-30 nanometers;

[0060] β-C in film 3 N 4 and graphite phase C 3 N 4 The composition ratio is 3:1;

[0061] The composition of graphite and amorphous carbon in the film is less than 5%.

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Abstract

The present invention relates to film preparing technology, and is especially one active atom beam spraying DC discharging process for preparing nanometer carbon nitride film. One set of arc heated plasma beam source is utilized to decompose methane and nitrogen to obtain outgoing particle beam comprising neutral nitrogen atoms and methyl radicals in the strength of 1019-1020 atoms / rad.sec. The outgoing particle beam reaches to the substrate to synthesize carbon nitride film at low substrate temperature. The synthesized film consists of compact 21-50 nm size spherical crystal grains of beta-C3N4, graphite phase C3N4 and CNx mainly.

Description

technical field [0001] The invention belongs to the technical field of thin film preparation, and in particular relates to a method for preparing a carbon nitride nanometer thin film by direct current discharge active atomic beam jetting. Background technique [0002] Since Liu and Cohen of the University of California, Berkeley in 1990 theoretically expected the existence of a kind of β-C whose hardness may exceed the metastable phase of diamond. 3 N 4 (a lattice structure of carbon nitride), the study of this type of material has been a hot spot in material science research. There are 5 possible structures of carbon nitride in theory, namely α phase, β phase, cubic phase, quasi-cubic phase and graphitic phase C 3 N 4 . In these 5 C 3 N 4 In addition to the graphite-like phase, the hardness of the other four phases (the elastic modulus is 427-483 GPa) is close to or exceeds the hardness of diamond (theoretical value is 435 GPa, and the experimental value is 443 GPa). ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/32C23C16/02C23C16/448C23C16/503C23C16/52
Inventor 许宁胡巍沈轶群张廷卫
Owner FUDAN UNIV
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