Image sensor and method of manufacturing the same

Abstract

A CMOS image sensor and a method of manufacturing the same are provided. The CMOS image sensor includes a semiconductor substrate including a plurality of photodiodes and a plurality of transistors, a first interlayer dielectric formed on the semiconductor substrate, a metal wiring and a second interlayer dielectric formed on the first interlayer dielectric, a plurality of color filter layers formed in the trenches formed in the second interlayer dielectric, and a plurality of micro lenses formed on the plurality of the color filter layers.

Description

technical field [0001] The present invention relates to a CMOS image sensor and a manufacturing method thereof. Background technique [0002] Image sensors are semiconductor devices used to convert optical images into electrical signals. A CCD (Charge Coupled Device) is a semiconductor device in which MOS (Metal Oxide Semiconductor) capacitors are located very close to each other and charge carriers are transferred to or stored in the capacitors. [0003] Meanwhile, the CMOS image sensor is a device using a switch mode that sequentially detects outputs by providing MOS transistors corresponding to the number of pixels by CMOS technology using peripheral devices such as a control circuit and a signal processing circuit. [0004] However, a CCD (Charge Coupled Device) has a complicated driving method, high power consumption, and requires a multi-step mask process, so its manufacturing process is complicated. In addition, the signal processing circuit cannot be implemented in...

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Problems solved by technology

Therefore, the focal distance from the microlens 114 to the photodiode area becomes longer, causing crosstalk between adjacent pixels and reducing sensitivity

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