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Impurity introducing method

An impurity and plasma technology, applied in the manufacture of discharge tubes, electrical components, semiconductor/solid-state devices, etc., can solve the problems of insufficient precision of shallow amorphous layers and narrow range of annealing conditions.

Inactive Publication Date: 2007-07-04
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0012] However, amorphization using ion implantation has problems in that it is not precise enough for forming a shallow amorphous layer, and the range of annealing conditions for recovering silicon crystals after annealing is narrow

Method used

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Embodiment approach 1

[0138] FIG. 1 is a cross-sectional diagram showing essential parts of an impurity introducing apparatus used in an exemplary embodiment according to the present invention.

[0139] As shown in FIG. 1, the impurity introducing apparatus 100 is configured such that plasma doping, plasma irradiation, and annealing are performed in a sequential manner in the apparatus. Specifically, in the apparatus 100, a semiconductor substrate as the substrate to be processed 13 is provided on a susceptor as the lower electrode 14 placed in the vacuum chamber 15, and a plasma generation region is formed near the surface of the substrate, thereby Perform plasma doping and plasma irradiation. The coil 3 is fixed to a high-frequency power source through the matching box 2 , whereby the high-frequency power source is supplied between the coil 3 and the lower electrode 14 . The lower electrode 14 is connected not only to the DC power source 10 but also to the high frequency power source 12 through ...

Embodiment approach 2

[0149] Hereinafter, a second exemplary embodiment of the present invention will be described.

[0150] Although in the first exemplary embodiment impurities are introduced after the surface of the silicon substrate is formed to be amorphous, the second exemplary embodiment is characterized in that the amorphous layer is formed by irradiating inactive gas phase plasma after introducing impurities .

[0151] In other words, after the degree of vacuum of the vacuum chamber 15 is set, the diborane gas introduction pipe 17 is opened, thereby forming an impurity introduction layer in a predetermined region of the silicon substrate 13 .

[0152] Next, the rare gas introduction pipe 16 is opened to generate rare gas plasma, and the plasma consisting only of electrically inactive particles is irradiated to the silicon substrate 13, thereby forming an amorphous layer. Depending on the conditions of the plasma irradiation, the amorphous layer may or may not have fine pores.

[0153] Af...

Embodiment approach 3

[0156] Hereinafter, a third exemplary embodiment of the present invention will be described.

[0157] Although in the first exemplary embodiment the impurity is introduced after the surface of the silicon substrate is formed to be amorphous, the third exemplary embodiment is characterized in that the impurity introducing step and the irradiation of the inactive gas phase plasma to form the amorphous layer steps.

[0158] In other words, after the vacuum degree of the vacuum chamber 15 is set, the rare gas introduction pipe 16 and the diborane gas introduction pipe 17 are opened together, thereby generating rare gas plasma, and the plasma consisting of only electrically inactive particles The silicon substrate 13 is irradiated, whereby an amorphous layer is formed, and at the same time, an impurity-introducing layer is formed in a predetermined region of the silicon substrate 13 . Depending on the conditions of the plasma irradiation, the amorphous layer may or may not have fi...

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Abstract

An impurity introducing method is provided for shallowly and efficiently introducing an impurity. The method includes a first step of making a surface of a semiconductor layer amorphous by using plasma composed of electrically inactive particles in the semiconductor layer on a solid-state base surface including the semiconductor layer, and a second process of introducing the impurity on the solid-state base surface. By performing the second process after performing the first process, an amorphous layer having fine pores is formed on the solid-state base surface including the semiconductor layer, and the impurity is introduced into the amorphous layer to form an impurity introduced layer.

Description

technical field [0001] The present invention relates to a method for introducing impurities, and more particularly, to a method for introducing impurities in the process of manufacturing semiconductor devices and the like. Background technique [0002] Due to the recent development of finer device technology in the device field, it is required to form junctions with a shallower profile. Low energy ion implantation is a known method of forming shallow junctions. Low-energy ion implantation uses very high voltages to drive ions away from the ion source and to decelerate the ions at a later stage. In this way, low energy implants are achieved while keeping the beam current values ​​at very high levels. This technique has succeeded in providing an impurity layer within a distribution as shallow as several tens of nm; and this layer has been put into practice in the semiconductor device industry. [0003] Plasma doping technology is attracting attention as a new technology for...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/265H01J37/30H01J37/317H01J37/32
CPCH01J37/32412H01L21/2236H01J2237/3365
Inventor 佐佐木雄一朗水野文二冈下胜己金成国伊藤裕之
Owner PANASONIC CORP
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