Performance enhancement of silicon-based device
a technology of silicon-based devices and power converters, which is applied in the direction of pulse techniques, process and machine control, instruments, etc., to achieve the effects of less expensive wbg, low rms current, and reduced wbg devices
Active Publication Date: 2022-11-15
HELLA KG HUECK & CO
View PDF5 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Benefits of technology
The present invention provides a way to use a WBG device for a short period of time while the silicon-based device is turned off. This helps to keep the RMS current low in the WBG device, allowing it to absorb larger currents without violating its safe operating area. This results in the need for fewer WBG devices and cheaper, lower-rated devices. It also helps to minimize i2R losses by keeping the WBG device off during the conduction of the silicon-based device, which can absorb and dissipate thermal stresses better.
Problems solved by technology
In addition, by keeping the WBG device off during the conduction of the parallel silicon-based device, the i2R losses are primarily confined to the silicon-based device, which can take advantage of its larger die to absorb and dissipate thermal stresses.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0014]Referring to FIG. 2, a power converter including a half-bridge is illustrated and generally designated 10. The power converter 10 is an SMPC that provides ZVS in the present embodiment, and includes resonant circuit topology 18 connected to the half-bridge converter. The power converter 10 also includes a controller 12 operatively coupled to each switch of first and second hybrid switching circuits, S1 and S2. The hybrid switching circuits S1 and S2 are electrically connected to a controlled current source 14 at a common node 16. Each hybrid switching circuit S1 and S2 includes first and second dissimilar switches that are parallel connected along respective first and second branches. Each parallel switching circuit S1 and S2 includes a silicon-based device parallel connected to a WBG device. In the illustrated embodiment, the silicon-based device is an Si MOSFET and the WBG device is a GaN HEMT. Other silicon-based devices can include, for example, an Si insulated-gate bipola...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| voltage | aaaaa | aaaaa |
| voltage | aaaaa | aaaaa |
| voltage | aaaaa | aaaaa |
Login to View More
Abstract
A power converter is provided. The power converter includes two or more hybrid switching circuits electrically connected to a source or storage element. Each switching circuit includes a wide bandgap device that is parallel-connected to a silicon-based device. The converter further includes a controller that is operatively coupled to each device of the first and second switching circuits. The controller is configured to operate each hybrid switching circuit by (i) activating the silicon-based device for an activation period, (ii) activating the wide bandgap device for a predetermined duty cycle less than the activation period, (iii) deactivating the silicon-based device while the wide bandgap device is activated, and (iv) deactivating the wide bandgap device. The hybrid switching circuits are sequentially operated to convert an alternating current of a power supply into a link voltage for a power converter, for example.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application claims the benefit of U.S. Provisional Application 62 / 716,011, filed Aug. 8, 2018, the disclosure of which is incorporated by reference in its entirety.FIELD OF THE INVENTION[0002]The present invention relates to switch-mode power converters (SMPCs) including multiple semiconductor switches in a parallel arrangement and, in particular, power converters employing soft-switching techniques to provide zero voltage switching (ZVS) and minimal switching losses.BACKGROUND OF THE INVENTION[0003]In power electronics, a high-current power capability can be provided by electrically connecting multiple semiconductor switches in parallel to permit the undertaking of a load current together. For example, multiple dissimilar switching devices have been used in parallel arrangements because they provide a hybrid switching circuit having a much lower conduction resistance as compared to a single switch. Further by example, Si MOSFETs and...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(United States)
IPC IPC(8): H03K17/567H02M3/335H02M1/00H02M1/08
CPCH02M3/33576H02M1/0058H03K17/567H02M1/083H02M3/33523Y02B70/10
Inventor BROWN, ALAN WAYNEJOHNSON, PHILIP MICHAEL
Owner HELLA KG HUECK & CO