Alkane and polyamine solvent compositions for liquid delivery chemical vapor deposition

Abstract

A solvent composition for liquid delivery chemical vapor deposition of metal organic precursors, to form metal-containing films such as SrBi2Ta2O9 (SBT) films for memory devices. An SBT film may be formed using precursors such as Sr(thd)2(tetraglyme), Ta(OiPr)4(thd) and Bi(thd)3 which are dissolved in a solvent medium comprising one or more alkanes. Specific alkane solvent compositions may advantageously used for MOCVD of metal organic compound(s) such as beta-diketonate compounds or complexes, compound(s) including alkoxide ligands, and compound(s) including alkyl and / or aryl groups at their outer (molecular) surface, or compound(s) including other ligand coordination species and specific metal constituents.

Description

[0001] This is a continuation in part of U.S. patent application No. 08 / 975,372 filed Nov. 20, 1997, which is a continuation in part of U.S. patent application No. 08 / 484,654 filed Jun. 7, 1995, which is a continuation in part of U.S. patent application No. 08 / 414,504 filed Mar. 31, 1995 and issued Oct. 13, 1998 as U.S. Pat. No. 5,820,664. This application also claims the priority of U.S. patent application No. 60 / 064,047 filed Nov. 3, 1997 in the name of Frank S. Hintermaier.[0002] 1. Field Of The Invention[0003] The present invention relates to a solvent composition useful for liquid delivery chemical vapor deposition of metal organic precursors including metal (beta-diketonato) precursors.[0004] 2. Description of the Related Art[0005] In the liquid delivery method of carrying out chemical vapor deposition (CVD) processes, a solid precursor is dissolved in an appropriate solvent medium or a liquid-phase precursor is vaporized and the resulting precursor vapor, typically mixed with...

AI Technical Summary

Problems solved by technology

Further, it is desirable that solvent compositions when used for multiple species not interact with the precursor or metal-containing molecules to form unstable chemical solutions, since such instability renders the overall composition unsuitable for liquid delivery.

In chemical vapor deposition processes for SBT, the use of precursors such as Sr(thd).sub.2(tetraglyme), Ta(OiPr).sub.4(thd) and triphenyl bismuth, dissolved in a solvent mixture such as tetrahydrofuran: isopropanol: tetraglyme in a volumetric ratio of 8:2:1 produced the result that Bi.sub.2O.sub.3 deposition was difficult to control.

Unfortunately, however, in the vaporizer the Bi(thd).sub.3 precursor caused the formation of black bismuth-rich residues, indicating premature decomposition was taking place during vaporization and transport.

Such a solvent system faces a number of problems.

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