Photoresist stripper compositions

a technology of compositions and strippers, applied in the field of photoresist stripper compositions, can solve the problems of reducing device yield, adversely affecting product reliability, and photoresist material inevitably becoming coated onto the backside of the wafer

Inactive Publication Date: 2003-06-19
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Also, during the spraying process, photoresist material inevitably becomes coated onto the backside of the wafer.
Any such contaminants can reduce device yield and adversely impact product reliability.
However, the solubility of conventional photoresist stripper compositions is often insufficient, particularly when used to remove DUV photoresists.
Further, a primary drawback to present photoresist stripper compositions is that they are expensive.
Unfortunately, however, the main component is EEP (75 wt %), which is quite expensive.
Also, DUV photoresists in particular dissolve too slowly using this composition.

Method used

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Examples

Experimental program
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example 1

[0046] NBA, GBL and EL were placed into a vessel and mixed to prepare a stripper composition. The amount of each component of the stripper composition was adjusted to 85% by weight of NBA, 5% by weight of GBL, and 10% by weight of EL. The viscosity of the thus prepared stripper composition was 0.79 cp (measured in a thermostat at 25.degree. C.).

example 2

[0047] NBA, GBL and EL were placed in a vessel and mixed to prepare a stripper composition. The amount of each component of the stripper composition was adjusted to 75% by weight of NBA, 5% by weight of GBL and 20% by weight of EL. The viscosity of the thus prepared stripper composition was 0.88 cp (measured in a thermostat at 25.degree. C.).

example 3

[0048] NBA, GBL and EEP placed in a vessel and mixed to prepare a stripper composition. The amount of each component of the stripper composition was adjusted to 85% by weight of NBA, 5% by weight of GBL and 10% by weight of EEP. The viscosity of the thus prepared stripper composition was 0.74 cp (measured in a thermostat at 25.degree. C.).

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Abstract

A photoresist stripper composition is made up of a mixture of an acetic acid ester, gamma-butyrolactone (GBL), and a non-acetate ester or a poly alkyl alcohol derivative. The acetic acid ester may be at least one of n-butyl acetate, amyl acetate, ethyl aceto-acetate, and isopropyl acetate. The non-acetate ester may be at least one of ethyl lactate (EL), ethyl-3-ethoxy propionate (EEP) and methyl-3-methoxy (MMP). The poly alkyl alcohol derivative may be at least one of propylene glycol monomethyl ester (PGME) and propylene glycol monomethyl ester acetate (PGMEA).

Description

[0001] 1. Field of the Invention[0002] The present invention generally relates to photoresist stripper compositions used in the manufacture of semiconductor devices, and more particularly, the present invention relates to photoresist stripper compositions which are especially suitable for use in the edge bead removal (EBR) and rework processes of photolithography.[0003] 2. Description of the Related Art[0004] Rework and edge bead removal (EBR) processes are common processes encountered during photolithography of semiconductor wafers or substrates.[0005] The rework process is carried out when a photoresist that has been coated onto a wafer contains defects. In this case, the defective photoresist is completely removed from the wafer using a stripper composition, thereby allowing the wafer to be reused.[0006] On the other hand, EBR results from certain characteristics of the photoresist coating process. That is, the photoresist is coated onto a wafer by dispensing the photoresist mate...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): G03F7/16G03F7/42H01L21/027
CPCG03F7/422G03F7/168
Inventor AHN, SEUNG-HYUNCHON, SANG-MUNCHUNG, HOE-SIKJEON, MI-SOOKBAE, EUN-MICHOI, BAIK-SOONJANG, OK-SEOK
Owner SAMSUNG ELECTRONICS CO LTD
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