Method and apparatus for processing a substrate with rinsing liquid

a substrate and rinsing liquid technology, applied in the field of substrate processing methods and substrate processing apparatuses, can solve the problems of large improvement space, large improvement space, and ineffective countermeasures, and achieve the prevention of rinsing-induced oxidation of the substrate surface, rapid increase of concentration of dissolved oxygen in the rinsing liquid, and large improvement space

Inactive Publication Date: 2005-01-13
DAINIPPON SCREEN MTG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Benefits of technology

[0007] Nevertheless, during actual rinsing, the rinsing liquid is gushed out toward the substrate surface from a rinsing nozzle and the rinsing liquid is exposed to air as soon as it gets ejected from the nozzle. Because of this, even when the concentration of dissolved oxygen in the rinsing liquid has already been lowered through the deaeration in advance, oxygen contained in air gets dissolved in the rinsing liquid immediately after injection of the rinsing liquid from the nozzle, and the concentration of dissolved oxygen in the rinsing liquid rapidly increases. Further, oxygen within air gets dissolved in the rinsing liquid not only right after injection of the rinsing liquid from the nozzle. Rather, dissolution continuously takes place at a predetermined rate even after that. Reduction of the amount of oxygen which gets dissolved in the rinsing liquid after the rinsing liquid has been ejected at the nozzle is thus important. In other words, a very important factor for prevention of rinsing-induced oxidation of the substrate surface is reduction of the concentration of dissolved oxygen in the rinsing liquid during a period that the substrate surface remains wet with the rinsing liquid, that is, a period of time (about thirty seconds, for instance) from the start of the rinsing until the end of drying. However, effective countermeasures have not been implemented so far regarding this, leaving a large space for improvement.
[0008] A primary object of the present invention is to provide a substrate processing method and a substrate processing apparatus with which it is possible to suppress build-up of an oxide film on the substrate which would otherwise caused by dissolved oxygen contained in the rinsing liquid.
[0010] By means of such a structure, the rinsing liquid which is pure water rich with nitrogen is produced. The substrate is rinsed as this rinsing liquid is injected toward the substrate. Since a rich amount of nitrogen has been added to the pure water to produce the rinsing liquid, the concentration of dissolved oxygen in the rinsing liquid is lowered. As soon as supplied toward the substrate, the rinsing liquid gets exposed to air starts and the concentration of dissolved oxygen rises. However, added nitrogen suppresses a speed at which the concentration increases. When such rinsing liquid is used, the concentration of dissolved oxygen in the rinsing liquid would not rapidly increase during a period (about thirty seconds, for instance) from the start of injection of the rinsing liquid toward the substrate until removal of the rinsing liquid off from the substrate, thereby suppressing build-up of an oxide film on the substrate which would otherwise occur owing to dissolved oxygen in the rinsing liquid.

Problems solved by technology

However, effective countermeasures have not been implemented so far regarding this, leaving a large space for improvement.
However, added nitrogen suppresses a speed at which the concentration increases.

Method used

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  • Method and apparatus for processing a substrate with rinsing liquid
  • Method and apparatus for processing a substrate with rinsing liquid
  • Method and apparatus for processing a substrate with rinsing liquid

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first embodiment

[0020]FIG. 1 is a cross sectional view which shows the structure of a substrate processing apparatus as a whole according to the present invention. FIG. 2 is a block diagram which shows the structure of control executed in the substrate processing apparatus of FIG. 1. Within this substrate processing apparatus 100, as shown in FIG. 1, a substrate W as it is held by a spin chuck 1 is subjected to film removal processing, rinsing and drying inside the same processing unit main section 101.

[0021] The spin chuck 1 comprises a disk-shaped base member 2, which also serves as a blocking member disposed on the back surface side of the substrate, and three or more holding members 3 which are formed on the top surface of the base member 2. Each one of the holding members 3 comprises a support part 3a, which receives and supports the substrate W from below at an outer peripheral portion of the substrate W, and a restriction part 3b which restricts the position of the outer edge of the substrat...

second embodiment

[0052] as well, since the deaeration units 59 and 79 are disposed together with the nitrogen dissolving units 58 and 78 within the processing unit main section 101, nitrogen is added after the deaeration of the pure water and the rinsing liquid is consequently produced, whereby the paths for the rinsing liquid until discharge at the nozzles 6 and 25 are shortened. Thus produced rinsing liquid is supplied to the substrate W quickly, and an increase of the concentration of dissolved oxygen in the rinsing liquid is more effectively suppressed.

[0053] With respect to the locations of the deaeration units 59 and 79, for a similar reason to that regarding the nitrogen dissolving units 58 and 78 in the first embodiment, it is desirable that the capacity of the rinsing liquid remaining in the rinsing liquid paths from the deaeration units 59 and 79 respectively to the outlets of the nozzles 6 and 25 is one liter or less. As ranges for suppressing an increase of the concentration of dissolve...

third embodiment

[0057] In contrast, the nitrogen dissolving unit 58 (78) is disposed outside the processing unit main section 101 according to the Hence, the nitrogen dissolving unit 58 (78) adds an abundant amount of nitrogen to the pure water, and an increase of the concentration of dissolved oxygen in the pure water arriving at the processing unit main section 101 is suppressed. While it is desirable that the nitrogen dissolving unit 58 (78) is disposed right behind the branching from the circulation path 200b where oxygen could be dissolved in the pure water in this regard, considering the duration of the effect of added nitrogen, it is equally desirable that the nitrogen dissolving unit 58 (78) is disposed such that the capacity of the rinsing liquid remaining in the rinsing liquid path from the nitrogen dissolving unit 58 (78) to the outlet of the nozzle 6 (25) will be 200 liters or less.

[0058] According to the third embodiment as well, as in the second embodiment, the deaeration unit 59 (79...

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Abstract

A pure water supplier is connected with an inlet of the nitrogen dissolving unit. Further, there is another inlet formed in the nitrogen dissolving unit, and this inlet is connected with a nitrogen gas supply source. Nitrogen gas from the nitrogen gas supply source is dissolved in pure water supplied from the pure water supplier, thereby producing nitrogen-rich pure water. Thus nitrogen-rich rinsing liquid is produced immediately prior to rinsing. This reduces the concentration of dissolved oxygen in the rinsing liquid. This also slows down an increase of the concentration of dissolved oxygen in the rinsing liquid which has been discharged at a nozzle.

Description

CROSS REFERENCE TO RELATED APPLICATION [0001] The disclosure of Japanese Patent Applications No.2003-192569 filed Jul. 7, 2003 and No.2004-91700 filed Mar. 26, 2003 each of which includes specification, drawings and claims is incorporated herein by reference in its entirely. BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The present invention relates to a substrate processing method and a substrate processing apparatus which require that rinsing is performed with supply of rinsing liquid to various types of substrates (hereinafter referred to simply as “substrate(s)”) such as semiconductor wafers, glass substrates for photo masks, glass substrates for liquid crystal displays, glass substrates for plasma displays and optical disk substrates. [0004] 2. Description of the Related Art [0005] Steps of manufacturing electronic components for a semiconductor device, a liquid crystal display device or the like include a step of repeatedly executing processing such as fi...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): G11B7/26C03C23/00H01L21/00H01L21/304H01L21/306
CPCC03C23/0075H01L21/67051H01L21/02052
Inventor MIYA, KATSUHIKOIZUMI, AKIRA
Owner DAINIPPON SCREEN MTG CO LTD
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