Method of fabricating semiconductor memory device and semiconductor memory device driver

Abstract

Disclosed is a method of fabricating a semiconductor memory device including the step of irradiating ultraviolet rays on a metal interconnection at a bonding pad part, so that the metal interconnection can be prevented from being corroded because of a corrodent element in the process of erasing charges stored in a charge storage part. An oxide coating film is formed on the surface of the metal interconnection at the bonding pad part, and ultraviolet rays are irradiated onto the oxide coating film for erasing of charges from the floating gate.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS [0001] This application is based upon and claims priority of Japanese Patent Application No. 2002-049438, filed on Feb. 26, 2002, the contents being incorporated herein by reference. BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The present invention relates to a method of fabricating a semiconductor memory device and a semiconductor memory device, and more particularly to a method of fabricating a non-volatile semiconductor memory device having the step of erasing charges cumulated in a charge storage part such as a floating gate by irradiating ultraviolet rays onto the surface of a metal wiring line of a bonding pad and such a semiconductor memory device. [0004] 2. Description of the Related Art [0005] Semiconductor memories using MOSFETs (Metal Oxide Semiconductor Type Field Effect Transistor) are generally used for storing digital data. Among these semiconductor memories, an EEPROM (Electrically Erasable Programmable ...

AI Technical Summary

Benefits of technology

[0013] Taking into consideration the above, an object of the present invention is to provide a method of fabri

Problems solved by technology

This may cause a memory malfunction.

Further, if too many charges are stored, an insulating film that is in contact with the floating gate may be destroyed.

However, the conventional fabrication method has the following problems.

This causes corrosion of the aluminum metallization after etching.

These factors may cause corrosion.

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