Polynorbornene foam insulation for integrated circuits
Patent Information
- Authority / Receiving Office
- US · United States
- Patent Type
- Applications(United States)
- Current Assignee / Owner
- MICRON TECH INC
- Publication Date
- 2005-02-10
- Estimated Expiration
- Not applicable · inactive patent
Smart Images

Figure 1 
Figure 2 
Figure 3
Abstract
Description
[0001] This application is a Divisional of U.S. application Ser. No. 09 / 507,964, filed Feb. 22, 2000 which is incorporated herein by reference.TECHNICAL FIELD
[0002] The present invention relates generally to development and fabrication of integrated circuits, and in particular to insulation techniques using polynorbomene foam as an insulating material in the development and fabrication of integrated circuits, as well as apparatus making use of such integrated circuits. BACKGROUND
[0003] To meet demands for faster processors and higher capacity memories, integrated circuit (IC) designers are focusing on decreasing the minimum feature size within integrated circuits. By minimizing the feature size within an integrated circuit, device density on an individual chip increases exponentially, as desired, enabling designers to meet the demands imposed on them. As the minimum feature size in semiconductor integrated circuits decreases, however, capacitive coupling between adjacent conductiv...