Sputtering apparatus and manufacturing method of metal layer/metal compound layer by using thereof

a technology of metal compound layer and sputtering apparatus, which is applied in the direction of vacuum evaporation coating, chemical vapor deposition coating, coating, etc., can solve the problems of reducing tungsten is not desirable, and the spiking phenomenon, so as to reduce the deposition improve the adhesive property of titanium, and avoid the adhesion of titanium nitride particles

Inactive Publication Date: 2005-02-24
LIU YU CHENG
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  • Abstract
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  • Application Information

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Benefits of technology

[0010] In view of the foregoing, the present invention provides an apparatus and a manufacturing method of metal layer, for reducing the deposition of titanium nitride particles, avoiding adhesion of titanium nitride particles, and to improve adhesive property of titanium and titanium nitride.

Problems solved by technology

However, aluminum causes a phenomenon of spiking, while tungsten is not desirable due to its adhesive property on substrates.
However, all of the forgoing methods fail to effectively reduce the deposition of titanium nitride particles and have problems such as high costs and low productivity.

Method used

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  • Sputtering apparatus and manufacturing method of metal layer/metal compound layer by using thereof
  • Sputtering apparatus and manufacturing method of metal layer/metal compound layer by using thereof

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Embodiment Construction

[0023]FIG. 1 is a schematic diagram showing the structure of a chamber of a sputtering apparatus based on one of preferred embodiments of the present invention. In the embodiment, the sputtering apparatus is, for example, AMAT Endura CL-SIP (Self Ionization Plasma).

[0024] In a preferred embodiment of the present invention, a temperature controlling device as installed on the sidewall of the chamber of the sputtering apparatus to control the temperature of the chamber during the process of forming titanium / titanium nitride. The purpose of using the temperature controlling device is for reducing the difference of temperature distribution in the chamber so that the temperature distribution within the chamber can be substantially uniform. According to the present invention, when the titanium / titanium nitride layers are formed under a substantially uniform temperature condition, the adhesive property of titanium and titanium nitride can be substantially promoted and also the deposition ...

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Abstract

A sputtering apparatus is provided. The sputtering apparatus comprises cooling water system having a temperature-controlling device for controlling the temperature of the sidewalls of the reaction chamber. During the deposition process of titanium/titanium nitride, the sidewall temperature of the chamber is controlled at about 50° C.˜70° C. for reducing the difference of temperature distribution in the chamber so that the reaction temperature within the reaction chamber can be rendered substantially uniform.

Description

CROSS-REFERENCE TO RELATED APPLICATION [0001] This application is a divisional of a prior application, Ser. No. 10 / 604,857, filed Aug. 22, 2003.BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The present invention relates to a manufacturing process of semiconductor device. More particularly, the present invention relates to a sputtering apparatus and a manufacturing method of metal / metal compound layer by using the sputtering apparatus. [0004] 2. Description of Related Art [0005] In a process of semiconductor metallization, due to ever increased high degree of integration, it is often required to form a structure with multilevel interconnects, where each metal layer is insulated from the other layers via insulation layers, and different metal layers are connected with conductive plugs. [0006] Aluminum and tungsten are so far the most important and frequently used metals in metallization processes. In prior art, aluminum is formed via magnetron DC sputtering and, ...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): C23C14/35C23C14/56C23C16/44H01J37/32
CPCC23C14/35H01J37/3405H01J37/32522C23C14/564
Inventor LIU, YU-CHENG
Owner LIU YU CHENG
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