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Plasma processing apparatus and method of designing the same

a technology of processing apparatus and plasma, which is applied in the direction of folding cycles, cycles, transportation and packaging, etc., can solve the problems of difficult to produce uniform microwave plasma, enlarge the processing time of substrates, and unsuitable cases, etc., and achieve the effect of convenient and convenient implementation

Inactive Publication Date: 2005-09-08
CANON KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0008] It is another object of the present invention to provide a plasma processing apparatus having a porous plate which is incorporated therein and which is effective to make uniform a plasma distribution adjacent an object to be processed, while suppresssing plasma density decrease, still very easily without relying on trial and error.
[0012] Briefly, in accordance with the present invention, a porous plate having holes which are non-uniform with respect to shape, size and / or distribution is used, by which various densities and distributions of plasma active species can be provided. Particularly, the shape, size and distribution of the holes may be determined in accordance with the active species distribution at the plasma producing portion and with diffusion calculation. This effectively removes the necessity of huge time and efforts required by the trial and error works, and a porous plate that assures desired plasma active species density and distribution can be accomplished easily and conveniently.

Problems solved by technology

Although this prior art example is suitably applicable to a case wherein a thin film is to be uniformely deposited on a semiconductor substrate, it is unsuitable to a case, such as etching, wherein a semiconductor is to be processed with relatively low pressure.
However, if the slot antenna is designed to provide approximately uniform microwave transmission distribution, although this enables that uniform microwave plasma is produced at underneath the microwave transmission window in a particular restrited condition, but in other conditions it is difficult to produce uniform microwave plasma there.
This caused enlargement of the substrate processing time.
On the other hand, relatively large holes were used to decrease the contact area with the plasma to suppress the plasma decrease, but the attribution of each hole became large and huge time and effort were spent by trial and error.
Thus, it was impractical.

Method used

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  • Plasma processing apparatus and method of designing the same
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  • Plasma processing apparatus and method of designing the same

Examples

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embodiment 1

[0038] A first embodiment of the present invention will be explained in detail with reference to an example of microwave plasma processing apparatus shown in FIG. 1 of the drawings. In FIG. 1, denoted at 1 is a plasma processing chamber of cylindrical shape, and denoted at 2 is a substrate to be processed. Denoted at 3 is a substrate carrying table for carrying a substrate 2 thereon. Denoted at 4 is a porous plate, and denoted at 5 is a processing gas introducing means. Denoted at 6 is an exhaust port, and denoted at 8 is an endless circular waveguide with slots, for introducing microwaves into the plasma processing chamber 1. Denoted at 11 are slots which are formed in the circular waveguide 8 with a pitch corresponding to a half or quarter of the wavelength of the microwave inside the tube. Denoted at 7 is a dielectric material window for introducing microwaves into the plasma processing chamber, and denoted at 10 is a cooling water flowpassage formed in the waveguide 8. The inner...

embodiment 2

[0043] In this embodiment, the porous plate 4 of the microwave plasma processing apparatus according to the first embodiment was replaced by a porous plate having an opening ratio of about 0.1, and nitride processing was performed to a substrate 2 in a similar manner as the first embodiment. The sectional area of each hole of the porous plate 4 used in the second embodiment is a half of that of the porous plate used in the first embodiment. Thus, the hole diameter is 1 / {square root}2 (square root of 2), and approximately it is within the range of 7 to 15 mm. The disposition of holes of the porous plate 4 is similar to the first embodiment.

[0044] After completion of the nitride processing, the thickness increment of the silicon oxide nitride film at the substrate 2 surface, as converted in terms of silicon oxide film, was measured by use of an Ellipsometer (KLA-Tencor Corporation). The result was 1 nm±2%. Comparing the film thickness distribution on the substrate 2 after the nitride...

embodiment 3

[0046] In this embodiment, the porous plate 4 of the microwave plasma processing apparatus according to the first embodiment was replaced by a porous plate 4 shown in FIG. 5, and nitride processing was performed to a substrate 2 in a similar manner as the first embodiment. As regards the holes of the porous plate 4 used in the third embodiment, those holes placed along the first concentric circle, from the center, of the porous plate used in the first embodiment are removed while, on the other hand, the central hole is enlarged in size. Moreover, the opening ratio is made approximately equal to 0.22. Because the holes at the first concentric circle from the center are removed, a sufficient interval between adjacent holes can be assured even though the opening ratio is expanded to approx. 0.22. Hence, a sufficient mechanical strength of the porous plate is obtainable.

[0047] After completion of the nitride processing, the thickness increment of the silicon oxide nitride film at the s...

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Abstract

Disclosed is a plasma processing apparatus having a plasma producing portion and a porous plate provided between the plasma producing portion and an object to be processed, wherein the porous plate has a plurality of holes which are made non-uniform with respect to at least one of shape, size and disposition. Specifically, the shape, the size or the disposition of the holes is determined on the basis of an active species distribution at the plasma producing portion and of diffusion calculation, so that plasma active species adjacent the object to be processed has desired concentration and distribution. This assures uniform plasma distribution adjacent the object while a decrease of plasma density can be well suppressed.

Description

FIELD OF THE INVENTION AND RELATED ART [0001] This invention relates generally to a plasma processing apparatus such as, for example, an etching apparatus, a nitriding apparatus or an oxidation apparatus, for example, to be used in a semiconductor manufacturing process for semiconductor substrate or liquid crystal substrate, for example. More particularly, the invention concerns a plasma processing apparatus by which the amount of plasma active species or active molecules adjacent a substrate (object to be processed) can be made into desired density (or concentration) and distribution. [0002] For improved yield of chips to be produced on a semiconductor substrate, the process uniformity over the semiconductor substrate surface is very important in plasma processing apparatuses. In order to accomplish the process uniformity over the semiconductor substrate surface, many attempts have been made in plasma processing apparatuses. Use of a porous plate is an example. [0003] As an example...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H05H1/46C23C16/44C23F1/00H01L21/00H01L21/205H01L21/3065H01L21/31H05H1/00
CPCH01J37/32357H01J37/32422H01L21/67069H01L21/0234H01L21/02332
Inventor UCHIYAMA, SHINZO
Owner CANON KK
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