Substrate processing apparatus

Abstract

A substrate processing apparatus comprises roll chucks for holding and rotating a substrate, a closable chamber housing the roll chucks therein, and a gas introduction pipe for introducing a gas into the chamber. The substrate processing apparatus further comprises an etching unit for etching and cleaning a peripheral portion of the substrate while the substrate is being rotated by the roll chucks, and a first supply passage for supplying a first liquid to the etching unit.

Description

[0001] This application is a divisional of U.S. Ser. No. 10 / 233,476, filed Sep. 4, 2002.BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The present invention relates to a substrate processing apparatus and a substrate processing method, and more particularly to a substrate processing apparatus suitable for use in etching or cleaning a peripheral portion or an opposite surface of a semiconductor substrate at a high level of cleanliness. [0004] 2. Description of the Related Art [0005] In recent years, attention has been drawn to technologies for embedding an interconnection material in trenches on semiconductor substrates to form damascene interconnections of copper, for example. It has also been attempted in the art to form capacitor electrodes having a high dielectric constant in semiconductor substrates. In either case, a desired metal or metal compound is deposited as a thin film on a surface of a semiconductor substrate by sputtering or the like. At this time,...

AI Technical Summary

Benefits of technology

The apparatus effectively reduces metal contamination and oxidation, maintaining the substrate's cleanliness and preventing the formation of copper oxides, thereby minimizing the increase in specific electric resistance of interconnections.

Problems solved by technology

Contamination of the bevel portion and the opposite surface with metal or a metal compound results in contamination of a robot arm, which holds and moves the semiconductor substrate, and a cassette which accommodates the semiconductor substrate during a process of transferring the semiconductor substrate to a subsequent processing step.

Eventually, metal contamination spreads throughout an overall LSI fabrication process.

Particularly, copper would pose an extremely serious problem during a heat treatment process because copper has a high coefficient of diffusion into a silicon oxide film, which is on the semiconductor substrate.

However, the above process is disadvantageous in that a large amount of nitrogen gas has to be supplied to prevent the liquid mixture from flowing onto the surface of the semiconductor substrate, and in that the liquid mixture needs to be supplied also in a large amount to clean the bevel portion.

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