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Magnetoresistive element

a technology of magnetoresistor and element, applied in the field of magnetoresistive element, can solve the problem of not being able to satisfy both of them, and achieve the effect of satisfying both of them

Inactive Publication Date: 2007-01-18
KK TOSHIBA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0011] According to a first aspect of the present invention, there is provided a magnetoresistive element comprising a first magnetic layer which includes a first surface and a second surface and has a first standard electrode potential, a second magnetic layer, a barrier layer which is provided between the second magnetic layer and the first surface of the first magnetic layer, and a nonmagneti

Problems solved by technology

However, no method of satisfying both of them has been reported yet.

Method used

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first embodiment

[1-1] First Embodiment

[0063]FIG. 4 is a schematic view showing an MTJ element according to the first embodiment of the present invention. The outline of the structure of the MTJ element according to the first embodiment will be described below.

[0064] As shown in FIG. 4, an MTJ element 100 according to the first embodiment includes a magnetization pinned layer (magnetic layer) 111 whose magnetization is fixed, a free layer (magnetic layer) 113 whose magnetization reverses, a tunnel barrier layer (nonmagnetic layer) 112 sandwiched between the magnetization pinned layer 111 and the free layer 113, and an alloy cap layer 114 in contact with the free layer 113.

[0065] The alloy cap layer 114 is formed of a nonmagnetic layer. The alloy cap layer 114 is made of an alloy of a first metal material M1 and a second metal material M2. A standard electrode potential V1 of the first metal material M1 is lower than a standard electrode potential V of the free layer 113 adjacent to the alloy cap l...

example 1

[0100]FIG. 16 is a sectional view of an MTJ element according to Example 1 of the present invention. The structure of the MTJ element according to Example 1 will be described below.

[0101] As shown in FIG. 16, an MTJ element 100 according to Example 1 includes a lower interconnection connecting layer 121 made of Ta (thickness: 5 nm), a buffer layer 122 made of Ru (thickness: 1 nm), an antiferromagnetic layer 123 made of Pt—Mn (thickness: 15 nm), a magnetization pinned layer 111 made of Co—Fe (thickness: 5 nm), a tunnel barrier layer 112 made of aluminum oxide (AlOX) (thickness: 1 nm), a free layer 113 made of Ni—Fe (thickness: 4 nm), an alloy cap layer 114 made of an Ru—Ta alloy or Ru—Cr alloy (thickness: 3 nm), and a mask layer 124 made of Ta (thickness: 50 nm). The mask layer 124 functions as an etching mask, surface protection layer, and upper interconnection connecting layer.

example 2

[0102]FIG. 17 is a sectional view of an MTJ element according to Example 2 of the present invention. The structure of the MTJ element according to Example 2 will be described below.

[0103] As shown in FIG. 17, an MTJ element 100 according to Example 2 has a so-called synthetic ferrimagnetic pinned layer structure in which a magnetization pinned layer 111 includes a ferromagnetic layer 111a / nonmagnetic layer 111b / ferromagnetic layer 111c. The ferromagnetic layers 111a and 111c are antiferromagnetically coupled.

[0104] More specifically, the MTJ element 100 includes a lower interconnection connecting layer 121 made of Ta (thickness: 5 nm), an antiferromagnetic layer 123 made of Pt—Mn (thickness: 15 nm), the magnetic layer 111a made of Co—Fe (thickness: 2 nm), the nonmagnetic layer 111b made of an Ru—Ta alloy, the magnetic layer 111c made of Co—Fe (thickness: 2 nm), a tunnel barrier layer 112 made of aluminum oxide (AlOX) (thickness: 1 nm), a free layer 113 made of Ni—Fe (thickness: 4 ...

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Abstract

A magnetoresistive element includes a first magnetic layer which includes a first surface and a second surface and has a first standard electrode potential, a second magnetic layer, a barrier layer which is provided between the second magnetic layer and the first surface of the first magnetic layer, and a nonmagnetic cap layer which contacts the second surface of the first magnetic layer and is formed from an alloy of a first metal material and a second metal material, the first metal material having a second standard electrode potential lower than the first standard electrode potential, the second metal material having a third standard electrode potential higher than the first standard electrode potential.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS [0001] This application is based upon and claims the benefit of priority from prior Japanese Patent Application No. 2005-183718, filed Jun. 23, 2005, the entire contents of which are incorporated herein by reference. BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The present invention relates to a magnetoresistive element having an alloy cap layer and a magnetic random access memory (magnetoresistive random access memory) (MRAM). [0004] 2. Description of the Related Art [0005] A magnetic random access memory (MRAM) is a memory device which uses magnetic elements having a magnetoresistance effect as cell units to store information. Magnetic random access memories have received a great deal of attention as next-generation memory devices featuring high-speed operation, large capacity, and nonvolatility. The magnetoresistance effect is a phenomenon that when a magnetic field is applied to a ferromagnetic material, the electric...

Claims

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Application Information

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IPC IPC(8): G11C11/00
CPCG11C11/15H01L43/08H01L27/228H01L27/224G11C11/1659G11C11/161H10B61/10H10B61/22H10N50/10
Inventor NAGAMINE, MAKOTONAGASE, TOSHIHIKOIKEGAWA, SUMIONISHIYAMA, KATSUYAYOSHIKAWA, MASATOSHI
Owner KK TOSHIBA
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