Method of patterning ultra-small structures

a patterning and ultra-small technology, applied in the field of patterning ultra-small structures, can solve the problems of difficult production of compact, nonporous and smooth vertical surfaces, limited reaction rate,

Inactive Publication Date: 2007-02-15
ADVANCED PLASMONICS
View PDF99 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At high current density, the reaction rate becomes limited by diffusion of ions in the solution.
The production of compact, nonporous and smooth vertical surfaces is difficult with existing electroplating techniques.
However, with these techniques, patterned structures are known to cause a shadowing effect to occur during coating such that material deposition is uneven across the breadth of the patterned surface.
Direct current electro-plating processing tends to produce non-uniform structures across a die or wafer.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method of patterning ultra-small structures
  • Method of patterning ultra-small structures
  • Method of patterning ultra-small structures

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025]FIG. 1 is a schematic drawing of a configuration of an example coating apparatus according to embodiments of the present invention. A computer such as personal computer 101 is connected to a function generator 102, e.g., by a standard cable such as USB cable 103. Personal computer 101 is also connected to analog input-output card 105, e.g., by standard USB cable 104.

[0026] Waveform functions on the personal computer 101 are drawn using a standard program included with function generator 102. After the personal computer 101 downloads the waveforms to function generator 102, the function generator sets characteristics such as amplitude, period, and offset of its output electrical signal. The output of function generator 102 is sent to the current amplifier 108 along cables 106 and 107. The cables 106 and 107 may be, e.g., standard USB cables.

[0027] In cases where the output current of the function generator is insufficient to carry out the plating, an amplifier 108 can be intr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
voltageaaaaaaaaaa
voltageaaaaaaaaaa
positive voltageaaaaaaaaaa
Login to view more

Abstract

We describe a process to produce ultra-small structures of between ones of nanometers to hundreds of micrometers in size, in which the structures are compact, nonporous and exhibit smooth vertical surfaces. Such processing is accomplished with pulsed electroplating techniques using ultra-short pulses in a controlled and predictable manner.

Description

RELATED APPLICATIONS [0001] This application is related to U.S. patent application Ser. No. 10 / 917,571, filed on Aug. 13, 2004, entitled “Patterning Thin Metal Film by Dry Reactive Ion Etching,” which is commonly owned at the time of filing, and the entire contents of which is incorporated herein by reference.COPYRIGHT NOTICE [0002] A portion of the disclosure of this patent document contains material which is subject to copyright or mask work protection. The copyright or mask work owner has no objection to the facsimile reproduction by anyone of the patent document or the patent disclosure, as it appears in the Patent and Trademark Office patent file or records, but otherwise reserves all copyright or mask work rights whatsoever. FIELD OF THE DISCLOSURE [0003] This disclosure relates to patterning ultra-small structures using pulsed electroplating. INTRODUCTION [0004] Electroplating is well known and is used in a variety of applications, including the production of microelectronics...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(United States)
IPC IPC(8): C25D5/02
CPCC25D5/18C25D5/022C25D5/623
Inventor GORRELL, JONATHANDAVIDSON, MARKTRUCCO, ANDRESTOKARZ, JEAN
Owner ADVANCED PLASMONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products