Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Pulse electroplating method and application thereof

A technology of pulse electroplating and forward pulse, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of unstable ion concentration recovery, affecting the performance and effect of the coating, and low ion concentration efficiency, so as to alleviate the concentration of cathode metal ions. Reduce, improve physicochemical properties, improve uniformity and density

Inactive Publication Date: 2014-02-26
FUDAN UNIV
View PDF6 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method requires a relatively long current shutdown time, and it is very inefficient to restore the ion concentration only by relying on the ion concentration gradient, resulting in a long electroplating time and unstable ion concentration recovery, which affects the performance and effect of the plating layer after electroplating.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Pulse electroplating method and application thereof
  • Pulse electroplating method and application thereof
  • Pulse electroplating method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] Figure 4 It is the electroplating pulse waveform diagram of embodiment one.

[0051] Such as Figure 4 As shown, this embodiment is the process of electroplating copper, which is divided into T 1 , T 2 , T 3 three phases.

[0052] T 1 phase consists of 10 cycles, T 2 phase consists of 20 cycles, T 3 A phase consists of 30 cycles.

[0053] The steps of each cycle are as follows:

[0054] A. First, apply a forward pulse current, the forward pulse current is 3 amperes, and the forward pulse width is 5 seconds.

[0055] B. After that, there is a period of current off time, that is, between positive pulses.

[0056] C. Then apply a reverse pulse current slightly larger than the forward current, the reverse pulse current is 5, and the reverse pulse width is slightly shorter than the forward pulse width, which is 2 seconds.

[0057] D. Finally, there is a period of current off time, that is, between reverse pulses.

[0058] T 1 The forward and reverse pulse inter...

Embodiment 2

[0064] The present embodiment is the process of electroplating nickel, which is divided into 6 stages.

[0065] The first stage consists of 12 cycles, the second stage consists of 25 cycles, the third stage consists of 18 cycles, the fourth stage consists of 15 cycles, the fifth stage consists of 22 cycles, and the sixth stage consists of 28 cycles. constitutes a cycle.

[0066] The steps of each cycle are as follows:

[0067] A. First, apply a forward pulse current, the forward pulse current is 50 amperes, and the duration, that is, the forward pulse width is 30 seconds.

[0068] B. After that, there is a period of current off time, that is, between positive pulses.

[0069] C. Then apply a reverse pulse current slightly larger than the forward current, the reverse pulse current is 60, and the duration, that is, the reverse pulse width is slightly shorter than the forward pulse width, which is 10 seconds.

[0070] D. Finally, there is a period of current off time, that is,...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention belongs to the field of semiconductor interconnection technology and in particular to a pulse electroplating method and application thereof. The method provided by the invention is as below: a plurality of stages are included, and each stage comprises a plurality of periods; each period is applied with a forward pulse and then a reverse pulse, wherein the current of the reverse pulse is greater than that of the forward pulse, the reverse pulse width is shorter than forward pulse width, and reverse interpulse and the forward interpulse are the same; the forward pulse and reverse pulse in each stage are constant; and forward pulse in a latter phase is shorter than the forward interpulse of a previous stage. The invention has the advantage that reverse pulse current accelerates recovery of ion concentration, a relaxation time is provided in a current turn-off time between two pulses, and the stripping process in the period also improves the smoothness of a coating surface. The method provided by the invention can be used in the preparation of a metal interconnection structure.

Description

technical field [0001] The invention belongs to the technical field of semiconductor interconnection technology, in particular to a pulse electroplating method and its application, in particular to an electroplating method for filling metals such as copper, nickel and aluminum into through holes and its application. Background technique [0002] With the further shrinking of device feature size in VLSI, the reliability problems caused by RC delay and electromigration of interconnection lines have gradually become the main contradictions affecting the circuit speed. Therefore, the search for conductive materials with lower resistivity and dielectric materials with lower dielectric constant has become a major development direction of deep submicron integrated circuit technology. [0003] Since the chloride produced by the metal in the etching process is not volatile, it is not easy to prepare patterns by general plasma etching. At present, the international wiring technology ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C25D5/18C25D7/12C25D7/04H01L21/768
Inventor 卢红亮朱尚斌孙清清丁士进张卫
Owner FUDAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com