Use of Beam Scanning to Improve Uniformity and Productivity of a 2D Mechanical Scan Implantation System

Abstract

An ion implantation system includes a beamline configured to direct an ion beam toward an end station configured to hold or support a workpiece, and a scanning system. The scanning system is configured to scan the end station past the ion beam in a two-dimensional fashion comprising a first scan axis along a first direction and a second scan axis along a second direction that is different than the first direction. The system further includes a supplemental scanning component operably associated with the scanning system, and configured to effectuate a scanning of the ion beam with respect to the end station along a third scan axis having a third direction that is different than the first direction.

Description

REFERENCE TO RELATED APPLICATION[0001]This application claims priority to and the benefit of U.S. Provisional Application Ser. No. 61 / 222,671 which was filed Jul. 2, 2009, entitled USE OF BEAM SCANNING TO IMPROVE UNIFORMITY AND PRODUCTIVITY OF A 2D MECHANICAL SCAN IMPLANTATION SYSTEM, the entirety of which is hereby incorporated by reference as if fully set forth herein.FIELD OF THE INVENTION[0002]The present invention relates generally to ion implantation systems and methods associated therewith, and more specifically to a system and method for improving uniformity and productivity of a 2D mechanical scan implantation system.BACKGROUND OF THE INVENTION[0003]In the semiconductor industry, various manufacturing processes are typically carried out on a substrate (e.g., a semiconductor wafer) in order to achieve various results on the substrate. Processes such as ion implantation, for example, can be performed in order to obtain a particular characteristic on or within the substrate, s...

AI Technical Summary

Benefits of technology

[0010]According to one embodiment of the invention, the supplemental scanning system provides a dithering of the ion beam in a direction that is different than a fast scan direction of the end station. Further, in one embodiment a frequency of the dithering is substantially greater than a fast scan frequency of the end station, thereby resulting in an ion beam profile along the fast scan axis that is larger than the ion beam itself. The increased ion beam profile or “scan width” provides for improved dose uniformity without a loss of system productivity or throughput.

[0011]According to another embodiment of the invention, a method of implanting a workpiece is provided. The method comprises directing an ion beam toward an e

Problems solved by technology

Due to the slower reciprocating motion of the workpiece, the two dimensional scanning system is not capable of the same scanning speeds as the batch tools.

Further, because of this slower scan speed the number of scan lines across the wafer is reduced, and therefore the micro-uniformity of the dose across the wafer is an issue to be considered.

Although this solution can be effectiv

Images