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Polymeric precursors for aigs silver-containing photovoltaics

Inactive Publication Date: 2011-02-10
PRECURSOR ENERGETICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0014]The compounds and compositions of this disclosure are stable and advantageously allow control of the stoichiometry of the atoms in the semiconductors, particularly the metal atoms.
[0016]The compounds and compositions of this disclosure are useful to prepare semiconductor layers having enhanced uniformity and superior properties.
[0018]The polymeric precursor compounds and compositions of this disclosure can provide enhanced processability for solar cell production, and the ability to be processed on a variety of substrates including polymers at relatively low temperatures.

Problems solved by technology

Thus, the usefulness of an optoelectronic or solar cell product is in general limited by the nature and quality of the photovoltaic layers.
In general, CIGS materials are complex, having many possible solid phases.
The difficulties with these approaches include lack of uniformity of the CIGS layers, such as the appearance of different solid phases, imperfections in crystalline particles, voids, cracks, and other defects in the layers.
A significant problem is the inability in general to precisely control the stoichiometric ratios of the metal atoms in the layers.
Without direct control over those stoichiometric ratios, processes to make semiconductor and optoelectronic materials are often less efficient and less successful in achieving desired compositions and properties.
For example, no molecule is currently known that can be used alone, without other compounds, to readily prepare a layer from which CIGS materials of any arbitrary stoichiometry can be made.
A further difficulty is the need to heat the substrate to high temperatures to finish the film.
This can cause unwanted defects due to rapid chemical or physical transformation of the layers.
High temperatures may also limit the nature of the substrate that can be used.
Polymer substrates may not be compatible with the high temperatures needed to process the semiconductor layers.
Moreover, methods for large scale manufacturing of CIGS and related thin film solar cells can be difficult because of the chemical processes involved.
In general, large scale processes for solar cells are unpredictable because of the difficulty in controlling numerous chemical and physical parameters involved in forming an absorber layer of suitable quality on a substrate, as well as forming the other layers required to make an efficient solar cell and provide electrical conductivity.

Method used

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Examples

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example 1

Preparation of Polymeric Precursor Compounds and Compositions

[0565]A polymeric precursor represented by the formula {Cu0.5Ag0.5(SesBu)4In} was synthesized using the following procedure.

[0566]In an inert atmosphere glovebox, a Schlenk tube was charged with 0.64 g (1.22 mmol) of In(SesBu)3, 0.15 g (0.61 mmol) of AgSesBu and 0.12 g (0.60 mmol) of CuSesBu. Benzene (15 mL) was added, and the reaction mixture was stirred at 25° C. for 30 min. An orange solution was obtained. This solution was filtered through a filter cannula and the mother liquor was collected. The solvent was then removed under dynamic vacuum. 0.88 g (97%) of orange solid was recovered.

[0567]Elemental analysis: C, 25.3, H, 4.61. NMR: (1H) 1.03 (br), 1.72 (br), 1.80 (br), 2.05 (br), 3.72 (br), 3.95 (br) in C6D6.

[0568]The TGA for this MPP-CAIGS polymeric precursor showed a transition beginning at about 146° C., having a midpoint at about 211° C., and ending at 220° C. The yield for the transition was 49.6% (w / w), as compa...

example 2

[0569]A polymeric precursor represented by the formula {Cu0.7Ag0.1(SesBu)3.8Ga0.3In0.7} was synthesized using the following procedure.

[0570]In an inert atmosphere glovebox, a Schlenk tube was charged with 0.74 g (1.4 mmol) of In(SesBu)3, 0.28 g (0.59 mmol) of Ga(SesBu)3, 0.28 g (1.4 mmol) of CuSesBu and 48 mg (0.2 mmol) of AgSesBu. Benzene (15 mL) was added, and the reaction mixture was stirred at 25° C. for 30 min. An orange solution was obtained. This solution was filtered through a filter cannula and the mother liquor was collected. The solvent was then removed under dynamic vacuum. 1.27 g (94%) of orange oil was recovered.

[0571]Elemental analysis: C, 26.8, H, 4.04. NMR: (1H) 1.02 (br), 1.65 (br), 1.84 (br), 2.02 (br), 3.71 (br) in C6D6.

[0572]The TGA for this MPP-CAIGS polymeric precursor showed a transition beginning at about 146° C., having a midpoint at about 212° C., and ending at 235° C. The yield for the transition was 51.0% (w / w), as compared to a theoretical yield for the...

example 3

[0573]A polymeric precursor represented by the formula {Cu0.8Ag0.2(SesBu)4In} was synthesized using the following procedure.

[0574]In an inert atmosphere glovebox, a Schlenk tube was charged with 0.52 g (1.0 mmol) of In(SesBu)3, 0.16 g (0.8 mmol) of CuSesBu and 49 mg (0.2 mmol) of AgSesBu. Benzene (15 mL) was added, and the reaction mixture was stirred at 25° C. for 30 min. An orange solution was obtained. This solution was filtered through a filter cannula and the mother liquor was collected. The solvent was then removed under dynamic vacuum. 0.72 g (99%) of orange oil was recovered.

[0575]Elemental analysis: C, 26.32, H, 4.87, In, 14.34, Ag, 1.54, Cu, 7.94. NMR: (1H) 0.99 (br), 1.11 (br), 1.71 (br), 1.81 (br), 2.03 (br), 3.68 (br) in C6D6.

[0576]In FIG. 8 is shown the TGA for this MPP-CAIGS polymeric precursor. The TGA showed a transition beginning at about 139° C., having a midpoint at about 212° C., and ending at 225° C. The yield for the transition was 46.2% (w / w), as compared to ...

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Abstract

This invention relates to compounds, polymeric compounds, and compositions used to prepare semiconductor and optoelectronic materials and devices including thin film and band gap materials. This invention provides a range of compounds, polymeric compounds, compositions, materials and methods directed ultimately toward photovoltaic applications, transparent conductive materials, as well as devices and systems for energy conversion, including solar cells. In particular, this invention relates to polymeric precursor compounds and precursor materials for preparing photovoltaic layers. A compound may contain repeating units {MB(ER)(ER)} and {MB(ER)(ER)}, wherein MA is Ag, each MB is In or Ga, each E is S, Se, or Te, and each R is independently selected, for each occurrence, from alkyl, aryl, heteroaryl, alkenyl, amido, silyl, and inorganic and organic ligands.

Description

CROSS REFERENCE TO RELATED APPLICATIONS[0001]This application claims the benefit of U.S. Provisional Application No. 61 / 231,158, filed Aug. 4, 2009, U.S. Provisional Application No. 61 / 302,094, filed Feb. 6, 2010, U.S. Provisional Application No. 61 / 302,095, filed Feb. 6, 2010, and U.S. Provisional Application No. 61 / 326,540, filed Apr. 21, 2010, each of which is hereby incorporated by reference in its entirety.BACKGROUND[0002]The development of photovoltaic devices such as solar cells is important for providing a renewable source of energy and many other uses. The demand for power is ever-rising as the human population increases. In many geographic areas, solar cells may be the only way to meet the demand for power. The total energy from solar light impinging on the earth for one hour is about 4×1020 joules. It has been estimated that one hour of total solar energy is as much energy as is used worldwide for an entire year. Thus, billions of square meters of efficient solar cell dev...

Claims

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Application Information

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IPC IPC(8): C09D11/02C07F1/10
CPCY10T428/13Y10T428/2958C07C391/00C09D11/02Y10T428/24628C09D11/52Y10T428/265Y10T428/263C07F1/005Y10T428/31678
Inventor FUJDALA, KYLE L.CHOMITZ, WAYNE A.ZHU, ZHONGLIANGKUCHTA, MATTHEW C.HUANG, QINGLAN
Owner PRECURSOR ENERGETICS
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