Electroplating Solutions and Methods For Deposition of Group IIIA-VIA Films

Abstract

The embodiment described herein relate to pulse electroplating methods and solutions.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application is a continuation-in-part of U.S. patent application Ser. No. 13 / 347,540 filed Jan. 10, 2012, which is a continuation of U.S. patent application Ser. No. 12 / 143,609 filed Jun. 20, 2008 (now U.S. Pat. No. 8,092,667), and is a continuation-in-part of U.S. patent application Ser. No. 13 / 306,863 filed Nov. 29, 2011, which is a continuation of U.S. patent application Ser. No. 12 / 123,372 filed May 19, 2008 (now U.S. Pat. No. 8,066,865), and is a continuation-in-part of U.S. patent application Ser. No. 12 / 121,687 filed May 15, 2008, and the entire contents of these applications are incorporated herein by reference.BACKGROUND[0002]1. Field of the Art[0003]This application relates to electroplating methods and solutions and, more particularly, to methods and electroplating solution chemistries for electrodeposition of Group IIIA-VIA layers on a conductive surface for solar cell applications.[0004]2. Description of the Related Art[...

AI Technical Summary

Benefits of technology

[0008]One technique employed for growing Cu(In,Ga)(S,Se)2 type compound thin films for solar cell applications is a two-stage process where at least two ingredients or elements or components of the Cu(In,Ga)(S,Se)2 material are first deposited onto a substrate, and then reacted with S and/or Se in a high temperature annealing process. For example, for CuInSe2 or CIS film growth, thin lay

Problems solved by technology

However, the cost of electricity generated using silicon-based solar cells is higher than the cost of electricity generated by the more traditional methods.

Such techniques may yield good quality absorber layers and efficient solar cells, however, they suffer from the high cost of capital equipment, and relatively slow rate of production.

Although it is possible to deposit In layers using various electroplating chemistries employing standard plating practices, unless these layers have sub-micron thickness and smooth morphology, they cannot be effectively used in thin film Group IBIIIAVIA compound solar cell fabrication.

However, electroplating a smooth Cu layer is relatively easy and the problem usually lies with Ga and In electrodeposition due to the tendency of these low melting, high surface tension elements forming droplets rather than continuous layers when deposited in thin film form.

This requirement presents many challenges for prior ar

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