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Copper wire and method of manufacturing the same

a technology of copper wire and copper wire, which is applied in the field of copper wire, can solve the problems of low weldability of oxygen-free copper, low half-softening temperature, and poor toughness of copper wire, and achieve the effect of high tensile strength

Inactive Publication Date: 2014-10-09
HITACHI METALS LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The invention can provide a copper wire that has a lower half-softening temperature and higher tensile strength than traditional copper wires, while also being oxygen-free. The method for manufacturing this copper wire is also presented.

Problems solved by technology

The tough pitch copper wire reported in NPL-1 has a problem that a half-softening temperature is relatively high even though tensile strength is high.
In addition, the tough pitch copper wire also has a problem that weld-ability thereof is inferior to that of oxygen-free copper, etc., because vapor is generated by combination of oxygen inside the tough pitch copper with hydrogen at the time of welding and causes cracks to occur at the welded portion.
The copper wires formed of high purity copper and copper with higher purity than the high purity copper which are reported in NPL-2 have a low half-softening temperature but crystals in these copper wires are coarsened due to secondary recrystallization when heat-treated, and there is thus a tendency that tensile strength of the copper wire is low.
In addition, there is also a problem that these copper wires are expensive.
However, this method has a problem that it is necessary to use high purity copper to manufacture copper wires.
Furthermore, although JP-B-H07-118216 describes a method of manufacturing a copper wire in which a longitudinal orientation of the copper wire is within 10° from the [111] or [100] crystal orientation, this method of manufacturing a copper wire is expensive and thus has a problem that it is not possible to mass-produce copper wires.

Method used

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embodiment

[0037]The copper wire in the present embodiment is formed of a copper wire rod containing Ti at a concentration of 5 to 55 mass ppm, sulfur at a concentration of 3 to 12 mass ppm, oxygen at a concentration of 2 to 30 mass ppm and the balance consisting of copper and inevitable impurities. Note that, the inevitable impurity means a substance inevitably mixed during the production process.

[0038]The copper wire has a first crystal and a second crystal. The first crystal has a crystal orientation and includes at least one twin crystal therein. The second crystal is one or more crystals adjacent to the first crystal, has a [111] crystal orientation provided by rotating the atomic plane at a different angle from the first crystal and includes at least one twin crystal therein. The first or second crystal is not more than 100 μm in size and the twin crystals therein are formed at a distance of not less than 0.1 mm and not more than 0.5 mm.

[0039]The copper wire has a conductivity of not les...

example 1

[0073]As shown in FIG. 1, it can be confirmed that crystal grains 1a and 1b in the crystal structure of Example 1 are larger than crystal grains 1 in Comparative Examples 1 to 3 shown in FIGS. 2 to 4. It can be also confirmed that the formation direction of twin crystal is different between a twin crystal 2a in the crystal grain 1a and a twin crystal 2b in the crystal grain 1b and that a rotated angle of the atomic plane is different between the crystal grains 1a and 1b. It can be confirmed that a distance between twin crystals formed in the crystal structure is not less than 0.1 mm and not more than 0.5 mm.

[0074]In Example 1, an x-ray diffraction peak is observed only from the (111) plane and is not observed from any of the (200), (220) and (311) planes, as shown in FIG. 5. This confirms that a percentage of planes in the [111] crystal orientation is substantially 100% in the copper wire of Example 1.

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Abstract

A copper wire includes a copper wire rod including 5 to 55 mass ppm of Ti, 3 to 12 mass ppm of sulfur, and 2 to 30 mass ppm of oxygen with the balance copper and inevitable impurities, a first crystal including a [111] crystal orientation and at least one twin crystal therein, and a second crystal that includes one or more crystals adjacent to the first crystal, a [111] crystal orientation with a different rotation angle on an atomic plane from the first crystal, and at least one twin crystal therein.

Description

[0001]The present application is based on Japanese patent application No. 2013-078927 filed on Apr. 4, 2013, the entire contents of which are incorporated herein by reference.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The invention relates to a copper wire and a method of manufacturing the copper wire.[0004]2. Description of the Related Art[0005]G. Bassi: Trans. AIME, Journal of Metals, July (1952) 753-754 (hereinafter NPL-1) reports that a tough pitch copper (3N copper) wire containing 0.04% of oxygen is initially provided with a [111] crystal orientation before wire drawing, then drawn at a compression ratio of 90.0 to 99.7% and annealed at 400° C. for 2 hours so as to have a [100] crystal orientation, and high temperature annealing at 950° C. for 1 hour followed by a secondary recrystallization is then conducted so as to have a fiber structure with a [111] crystal orientation. NPL-1 also reports that it is initially provided with a [100] crystal orientation b...

Claims

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Application Information

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IPC IPC(8): C22F1/08C22C9/00
CPCC22C9/00C22F1/08Y10T428/1266
Inventor AOYAMA, SEIGISUMI, TORUSAGAWA, HIDEYUKIFUJITO, KEISUKEGOTO, MASAYOSHIHIRUTA, HIROYOSHI
Owner HITACHI METALS LTD