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Optoelectronic devices with all-inorganic colloidal nanostructured films

a technology of colloidal nanostructured films and optoelectronic devices, which is applied in the direction of radiation control devices, semiconductor devices, electrical equipment, etc., can solve the problems of complex assembly procedures, inability to tolerate high temperature deposition techniques of many photodetecting semiconductor materials, and incompatible deposition techniques for certain compound semiconductor materials with established silicon integrated circuits, etc., to achieve multispectral detection of electromagnetic radiation wavelengths or wavelength ranges that are facilitated. , the effect of high sensitiv

Inactive Publication Date: 2014-10-30
SUNPOWER TECH CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The patent text describes a method of creating stable semiconductor nanoparticles in solution using functional inorganic ligands. These ligands help to prevent the particles from clumping together, allowing them to maintain their individuality and close-packing with each other. This results in all-inorganic colloidal nanostructures that can be used to create thin films with excellent sensitivity and stability. These films can be used to detect different wavelengths of light, making them ideal for use in imaging devices. The technical effect of this patent is the creation of efficient, flexible, and multi-spectral imaging systems that can detect light in a variety of different ways.

Problems solved by technology

Existing TFT array architectures can be used for larger area image sensing, however, they cannot tolerate the high temperature deposition techniques for many photodetecting semiconductor materials.
Deposition techniques for certain compound semiconductor materials are not compatible with established silicon integrated circuits.
In such systems a silicon electronic read-out array and wavelength radiation sensitive photodetector arrays are fabricated separately, resulting in a complex assembly procedure, low yield, poor resolution and higher manufacturing and assembling costs.
In addition, traditional manufacture of semiconductor substrates and optically sensitive semiconductor layers are limited to rigid and relatively small area optoelectronic devices.
Prior methods for solution-based nanoparticle films include volume losses of 30% or higher which may leave voids, holes, cracks and other defects in the film that negatively affect optoelectronic performance and require post-treatment to repair.
These methods may often result in poor fused film qualities that are not preferential for use in optoelectronic devices, because organic ligand materials may not be removed once the nanoparticle solutions are deposited and organic ligand materials act as insulating materials in the fused films.

Method used

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Embodiment Construction

[0028]Reference will now be made in detail to the preferred embodiments, examples of which are illustrated in the accompanying drawings. The embodiments described above are intended to be exemplary. One skilled in the art recognizes that numerous alternative components and embodiments that may be substituted for the particular examples described herein and still fall within the scope of the invention.

[0029]The present disclosure is described in detail with reference to embodiments illustrated in the drawings, which form a part hereof. In the drawings, which are not necessarily to scale or to proportion, similar symbols typically identify similar components, unless context dictates otherwise. Other embodiments may be used and / or other changes may be made without departing from the spirit or scope of the present disclosure. The illustrative embodiments described in the detailed description are not meant to be limiting of the subject matter presented.

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[0031]As used here...

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Abstract

Optoelectronic devices and methods of producing the same are disclosed. Methods may include forming a film from fused all-inorganic colloidal nanostructures, where the nanostructures may include inorganic nanoparticles and functional inorganic ligands, and the fused nanostructures may form an electrical network that is photoconductive. Other methods may provide an optoelectronic device which may include an integrated circuit or large panel thin-film transistor matrix, an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions.

Description

CROSS REFERENCE TO RELATED APPLICATIONS[0001]This application is a continuation of U.S. patent application Ser. No. 13 / 755,186, entitled “OPTOELECTRONIC DEVICES WITH ALL-INORGANIC COLLOIDAL NANOSTRUCTURED FILMS,” filed Jan. 31, 2013, which is claims priority under 35 U.S.C. §119 to U.S. Provisional Patent Application Ser. No. 61 / 744,953, entitled “OPTOELECTRONIC DEVICES WITH ALL-INORGANIC COLLOIDAL NANOSTRUCTURED FILMS,” filed on Oct. 1, 2012, all of which are hereby incorporated by reference in their entirety.BACKGROUND[0002]1. Technical Field[0003]The present disclosure relates in general to optical and electronic devices, and more particularly, to fused films of all-inorganic colloidal semiconductor nanometer scale materials (“nanostructures”) including semiconductor nanoparticles and functional inorganic ligands, which may be employed in an optoelectronic device.[0004]2. Background Information[0005]Digital imaging of sensed electromagnetic wavelengths is widely used in medical, ...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L27/146H01L31/0304H01L31/0376H01L31/0296
CPCH01L27/14665H01L31/0296H01L27/14676H01L31/0376H01L27/14669H01L31/0304H01L31/035218H01L31/00Y02E10/50
Inventor LANDRY, DANIEL
Owner SUNPOWER TECH CORP