Semiconductor integrated device including capacitor and memory cell and method of forming the same

Active Publication Date: 2017-01-26
UNITED MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention relates to a method of forming a semiconductor integrated device which simultaneously forms a PIP capacitor and a memory cell device on the same substrate, in the same or different STIs. The method allows for simultaneous formation of the bottom electrode of the PIP capacitor and the first polysilicon gate of the memory cell device through a single polysilicon layer. Likewise, the ONO layers of the PIP capacitor and the memory cell device are also formed through a single ONO layer. Additionally, the top electrode of the PIP capacitor and the second polysilicon gate of the memory cell device are also simultaneously formed through the other polysilicon layer. This simultaneous formation method saves manufacturing costs and time.

Problems solved by technology

In the current semiconductor field, though the fabricating processes are improved with the aim of reaching high yields, it is found that integration of the manufacturing methods of those different kinds of semiconductor devices is very complicated and difficult.

Method used

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  • Semiconductor integrated device including capacitor and memory cell and method of forming the same
  • Semiconductor integrated device including capacitor and memory cell and method of forming the same
  • Semiconductor integrated device including capacitor and memory cell and method of forming the same

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Embodiment Construction

[0014]To provide a better understanding of the present invention, preferred embodiments will be described in detail. The preferred embodiments of the present invention are illustrated in the accompanying drawings with numbered elements.

[0015]Please refer to FIG. 1 to FIG. 7, which are schematic diagrams illustrating the method of forming a semiconductor integrated device according to a first embodiment of the present invention. Firstly, a substrate 100 is provided. The substrate 100 can be a silicon substrate, an epitaxial silicon substrate, a silicon germanium substrate, a silicon carbide substrate or a silicon-on-insulator (SOI) substrate, but is not limited thereto. A memory cell region 200 is defined on the substrate 100 to form a memory cell device in the following steps, and a capacitor region 300 is defined on the substrate 100 to form a capacitor in the following steps, as shown in FIG. 1.

[0016]Next, a least one shallow trench isolation (STI) is formed in the substrate 100. ...

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Abstract

A semiconductor integrated device and a method of forming the same, the semiconductor integrated device includes a substrate, at least one shallow trench isolation, a memory cell device and a poly-insulator-poly capacitor. A capacitor region and a memory cell region are defined on the substrate. The at least one shallow trench isolation is formed in the substrate. The memory cell device is disposed on the at least one shallow trench isolation in the memory cell region and includes a double polysilicon gate. The poly-insulator-poly capacitor is disposed on the at least one shallow trench isolation in the capacitor region, wherein the poly-insulator-poly capacitor directly contacts the at least one shallow trench isolation.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The invention relates to a semiconductor integrated device and a method of forming the same, and more particularly, to a semiconductor integrated device having a capacitor structure and a memory cell structure, and a method of forming the same.[0003]2. Description of the Prior Art[0004]In semiconductor integrated circuits (ICs), a semiconductor capacitor may be implemented to provide a capacitive component within the design of a semiconductor integrated device. The applications for these capacitors can include mixed signal (analog / digital) devices, radio frequency devices, and even decoupling capacitors for the filtering of high frequency signals and improved noise immunization. In the current semiconductor field, though the fabricating processes are improved with the aim of reaching high yields, it is found that integration of the manufacturing methods of those different kinds of semiconductor devices is very complicat...

Claims

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Application Information

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IPC IPC(8): H01L27/115H01L49/02H01L29/788H01L29/06H01L29/66H01L27/07H01L29/423
CPCH01L27/11558H01L27/11521H01L27/0733H01L29/788H01L29/42324H01L29/0649H01L29/66825H01L28/60H01L28/87H01L28/91H01L27/0629H10B41/35
InventorJEN, PO-HANCHENG, CHAO-SHENG
OwnerUNITED MICROELECTRONICS CORP