Two-dimensional heterostructure materials

Abstract

Methods, articles of manufacture and systems for creating new nanoscale two dimensional materials comprising designed arrays of lateral or vertical heterojunctions may be fabricated by first lithographically masking a 2D material. Exposed, or unmasked, regions of the 2D material may be converted to a different composition of matter to form lateral or vertical heterojunctions according to the patterned mask. PLD and high kinetic energy impingement of atoms may replace or add atoms in the exposed regions, and a plurality of the exposed regions may be converted concurrently. The process may be repeated one or more times on either side of the same 2D material to form any suitable combination of lateral heterojunctions and / or vertical heterojunctions, comprising semiconductors, metals or insulators or any suitable combination thereof. Furthermore, the resulting 2D material may comprise p-n, n-n, p-p, n-p-n and p-n-p junctions, or any suitable combination thereof.

Description

CROSS REFERENCES TO RELATED APPLICATIONS[0001]This patent application makes reference to and claims priority to U.S. Provisional Patent Application Ser. No. 62 / 195,150, filed on Jul. 21, 2015, which is hereby incorporated by reference in its entirety.STATEMENT REGARDING FEDERALLY FUNDED RESEARCH AND DEVELOPMENT[0002]The United States Government has rights in this invention pursuant to contract no. DE-AC05-00OR22725 between the United States Department of Energy and UT-Battelle, LLC.BACKGROUND OF THE INVENTION[0003]1. Technical Field[0004]This disclosure relates generally to two dimensional (2D) electronic materials. Specifically, the disclosure pertains to the synthesis and patterning of 2D materials in controlled configurations for devices.[0005]2. Related Art[0006]2D nanostructure materials are the latest in a long line of useful materials that hold great promise for high-density electronics. Because of their nanoscale dimensions, electrons become quantum confined within and imbue...

AI Technical Summary

Benefits of technology

The patent describes a method for creating new compositions of matter by creating lateral and vertical heterojunctions on a two dimensional material. This involves fabricating a pattern on the material and depositing a mask over it. The masked areas are then converted to a different composition of matter to form the heterojunctions. The use of this method can create new materials with unique properties and structures. The two dimensional material can be formed by depositing layers of crystalline transition metal dichalcogenide (TMD) and the process can adjust the vacancy level in the material. The technical effects of this invention include the creation of new materials with unique structures and properties, which can be useful in various applications.

Problems solved by technology

However, wiring such 0D and 1D nanostructure materials to fabricate integrated circuits may present significant problems.

Chemical vapor deposition (CVD) growth poses a challenge when attempting to make 2D crystals of electronic-grade monolayers or few layered semiconductors with large areas.

However, it is difficult to grow two types of semiconductors together, laterally, to make multiple heterojunctions, which may be utilized in applications such as quantum wells.

Repeating growth steps may pose a problem since each material has an optimum growth temperature, and at higher temperatures, CVD growth may evaporate away materials, for example, metal chalcogenides may lose their chalcogen atoms.

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