Formation of SiGe Nanotubes

Abstract

Techniques for forming nanostructured materials are provided. In one aspect of the invention, a method for forming nanotubes on a buried insulator includes the steps of: forming one or more fins in a SOI layer of an SOI wafer, wherein the SOI wafer has a substrate separated from the SOI layer by the buried insulator; forming a SiGe layer on the fins; annealing the SiGe layer under conditions sufficient to drive-in Ge from the SiGe layer into the fins and form a SiGe shell completely surrounding each of the fins; and removing the fins selective to the SiGe shell, wherein the SiGe shell which remains forms the nanotubes on the buried insulator. A nanotube structure and method of forming a nanotube device are also provided.

Description

FIELD OF THE INVENTION[0001]The present invention relates to techniques for forming nanostructured materials, and more particularly, to the formation of silicon germanium (SiGe) nanotubes.BACKGROUND OF THE INVENTION[0002]Unlike carbon nanotubes, nanostructures of germanium, a group IV semiconductor, have not been fully explored. Germanium and associated compounds at nanoscale are promising candidates for future nanoelectronics based technologies, e.g., nanotube metal oxide semiconductor field effect transistor (MOSFET) devices, which can extend the device scaling roadmap while maintaining good short channel effects and providing competitive drive current.[0003]Techniques for forming nanotubes from a thin solid film of material have been proposed. See, for example, Schmidt et al., “Nanotechnology: Thin solid films roll up into nanotubes,” Nature 410, 168 (March 2001) which describes a process by which films that are released from a substrate roll up into the shape of a nanotube. It i...

AI Technical Summary

Benefits of technology

This method enables the production of SiGe nanotubes with consistent dimensions, compatible with CMOS processes, and suitable for large-scale production, enhancing their application in nanoelectronics and devices like chemical sensors with improved sensitivity.

Problems solved by technology

It is however difficult to achieve nanotubes with consistent dimensions using this type of process, and the process is not efficient enough for large-scale production.

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