Unlock instant, AI-driven research and patent intelligence for your innovation.

Plasmonic light emitting diode

a light-emitting diode and plasmonic technology, applied in the field of light-emitting diodes, can solve problems such as imposing structural and material limitations on devices

Active Publication Date: 2018-03-15
IBM CORP
View PDF2 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The patent describes a new type of LED made using a special structure called a quantum well. This structure has layers of material that generate light when an electric current is passed through them. The LED also has a layer of metal that can excite surface plasmsons, which are electromagnetic waves that can help to generate light. The LED can be made using a plasmonic metal that is deposited on top of a dielectric layer. By using this structure, the LED can generate light that is independent of the wavelength of the light. This makes it easier to create LEDs that can produce different colors of light. The patent also describes a method for making these LEDs. The technical effect of the invention is the creation of LEDs that can produce light with greater independence of wavelength, which makes them easier to use in applications that require different colors of light.

Problems solved by technology

Conventional plasmonic LEDs need to match a metal resonance wavelength with a semiconductor gain spectrum, which force structural and material limitations on the devices.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Plasmonic light emitting diode
  • Plasmonic light emitting diode
  • Plasmonic light emitting diode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015]Aspects of the present invention include a propagating plasmonic mode light emitting diode that functions at any wavelength. Useful embodiments include a propagating surface plasmonic mode to provide microcavity LEDs with enhanced light output. For LEDs, emission intensity scales linearly with input power. With a same active region size, a plasmonic LED in accordance with embodiments of the present invention provides an enhancement of a factor of about 2 or greater as compared to conventional LEDs. Compared between different device sizes, emission intensity approximately scales with area, e.g., emission intensity is approximately ∫Intensity*area.

[0016]In one embodiment, the plasmonic LED may be formed using III-V materials and placed on substrates, such as Si, to enable the formation of additional circuits using complementary metal oxide semiconductor (CMOS) processing. In other embodiments, the plasmonic mode LED can be employed with III-V active materials on a glass substrat...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A light emitting diode includes a square quantum well structure, the quantum well structure including III-V materials. A dielectric layer is formed on the quantum well structure. A plasmonic metal is formed on the dielectric layer and is configured to excite surface plasmons in a waveguide mode that is independent of light wavelength generated by the quantum well structure to generate light.

Description

BACKGROUNDTechnical Field[0001]The present invention relates to light emitting diodes, and more particularly to plasmonic light emitting diodes formed on-chip to provide greater output and a smaller footprint.Description of the Related Art[0002]High performance miniaturized light emitting diodes (LEDs) provide a promising device for applications, such as, next generation bio-sensing components and optical links. Conventional plasmonic LEDs need to match a metal resonance wavelength with a semiconductor gain spectrum, which force structural and material limitations on the devices.SUMMARY[0003]In accordance with an embodiment of the present invention, a light emitting diode includes a square quantum well structure, the quantum well structure including III-V materials. A dielectric layer is formed on the quantum well structure. A plasmonic metal is formed on the dielectric layer and is configured to excite surface plasmons in a waveguide mode that is independent of light wavelength gen...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(United States)
IPC IPC(8): H01L33/06H01L33/30H01L33/60H01L33/00
CPCH01L33/06H01L33/30H01L33/60B82Y30/00H01L2933/0058B82Y10/00H01L33/0062B82Y20/00H01L33/58H01L33/64
Inventor CHEN, YAOJIALI, NINGSADANA, DEVENDRA K.YANG, JINGHUI
Owner IBM CORP