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Semiconductor device and method of manufacturing semiconductor device

Inactive Publication Date: 2018-10-25
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention aims to reduce recovery current in a technology. This is achieved by arranging a trench in the first main surface, which is on the side of the anode layer with respect to the boundary between the anode layer and the diffusion layer. This reduces the recovery current and improves the performance of the technology.

Problems solved by technology

However, the inverter circuit is largely desired to be reduced in size, weight, and cost, and thus it is not desirable to mount a plurality of IGBTs and a plurality of FWDs on the inverter circuit individually.
However, in the RC-IGBT, a recovery current being an opposite current to a current usually supposed to flow as a diode (forward current) flows when the FWD is turned into an off state from an on state, and there has been a problem in that the recovery current becomes a cause of energy loss.

Method used

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  • Semiconductor device and method of manufacturing semiconductor device
  • Semiconductor device and method of manufacturing semiconductor device
  • Semiconductor device and method of manufacturing semiconductor device

Examples

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first preferred embodiment

[0040]FIG. 1 is a sectional view for illustrating configuration of a semiconductor device according to a first preferred embodiment of the present invention. In the following, out of components to be described in this first preferred embodiment, components that are the same or similar to the components already described in the related semiconductor device are denoted by the same reference symbols, and different components are mainly described.

[0041]As illustrated in FIG. 1, in a semiconductor device according to this first preferred embodiment, a first trench 31 is arranged in the upper surface of the semiconductor substrate 11 on a side of the p-type anode layer 13 with respect to the boundary between the p-type anode layer 13 and the first p-type diffusion layer 14. That is, the first trench 31 is not brought into contact with the first p-type diffusion layer 14, and is arranged in a portion of the p-type anode layer 13 on the first p-type diffusion layer 14 side. Note that, in th...

second preferred embodiment

[0044]FIG. 2 is a plan view for illustrating configuration of the semiconductor device according to a second preferred embodiment of the present invention. In the following, out of components to be described in this second preferred embodiment, components that are the same or similar to the components already described in the related semiconductor device are denoted by the same reference symbols, and different components are mainly described.

[0045]As illustrated in FIG. 2, in the semiconductor device according to this second preferred embodiment, a second trench 32 crossing with the first trench 31 is arranged in the p-type anode layer 13. Note that, inside the second trench 32, similarly to the first trench 31, an electrode layer that is the same as the gate electrode layer is arranged with intermediation of an insulation film that is the same as the gate insulation film.

[0046]According to the semiconductor device of this second preferred embodiment as described above, an electric ...

third preferred embodiment

[0047]FIG. 3 is a sectional view for illustrating configuration of the semiconductor device according to a third preferred embodiment of the present invention. In the following, out of components to be described in this third preferred embodiment, components that are the same or similar to the components already described in the related semiconductor device are denoted by the same reference symbols, and different components are mainly described.

[0048]In the semiconductor device according to this third preferred embodiment, p-type impurity concentration of the p-type anode layer 13 decreases as approaching to the first p-type diffusion layer 14. Note that, as a method of forming an impurity layer having concentration gradients to be the p-type anode layer 13, a commonly known method of variation of lateral doping (VLD) may be used, for example, or other methods may be used as well.

[0049]According to the semiconductor device of this third preferred embodiment as described above, the p...

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Abstract

A semiconductor device includes a semiconductor substrate in which a first region having a freewheeling diode arranged therein, second regions having an IGBT arranged therein, and a withstand-voltage retention region surrounding the first region and the second regions in plan view are defined. The semiconductor substrate has a first main surface and a second main surface. The semiconductor substrate includes an anode layer having a first conductivity type, which is arranged in the first main surface of the first region, and a diffusion layer having the first conductivity type, which is arranged in the first main surface of the withstand-voltage retention region adjacently to the anode layer. A first trench is arranged in the first main surface on a side of the anode layer with respect to a boundary between the anode layer and the diffusion layer.

Description

FIELD OF THE INVENTION[0001]The present invention relates to a semiconductor device such as a power semiconductor device and a method of manufacturing the semiconductor device.DESCRIPTION OF THE BACKGROUND ART[0002]A power device as a power semiconductor device is used in a wide range of fields such as the fields of home electronic appliances, electric vehicles, and railroads and the fields of solar photovoltaic power generation and wind power generation that have been attracting more attention as power generation of renewable energy. In those fields, an inductive load of an induction motor or the like is driven by an inverter circuit constructed by a power device in many cases. In a configuration of driving an inductive load, a freewheeling diode (hereinafter referred to as an “FWD”) for circulating a current generated due to a counter-electromotive force of an inductive toad is provided. Note that, a typical inverter circuit is formed of a plurality of insulated gate bipolar trans...

Claims

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Application Information

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IPC IPC(8): H01L27/06H01L29/861H01L29/739H01L29/06H01L29/66
CPCH01L27/0635H01L29/861H01L29/7395H01L29/0607H01L29/66136H01L29/66333H01L29/1004H01L29/1095H01L29/0804H01L29/0821H01L29/0684H01L21/82H01L27/0727H01L29/0657H01L29/36H01L29/0649H01L29/1602H01L29/1608H01L29/2003H01L29/0696H01L29/0834H01L29/4238H01L29/402H01L29/0615
Inventor NAKAMURA, HIROYUKISONEDA, SHINYA
Owner MITSUBISHI ELECTRIC CORP