Semiconductor treatment composition

Abstract

A semiconductor treatment composition includes potassium, sodium, and a compound A represented by the formula (1), and has a potassium content MK (ppm) and a sodium content MNa (ppm) that satisfy MK / MNa=1×10−1 to 1×104.

Description

CROSS-REFERENCE TO RELATED PATENT APPLICATIONS[0001]This application is a continuation application of prior U.S. patent application Ser. No. 15 / 608,176, filed on May 30, 2017, the entire content of which is incorporated herein by reference, and this application claims the benefit of Korean Patent Application No. 2017-0017335 filed on Feb. 8, 2017 in the Korean Intellectual Property Office, the disclosure of which is incorporated herein in its entirety by reference.BACKGROUND OF THE INVENTION[0002]The present invention relates to a semiconductor treatment composition, and a treatment method that utilizes the semiconductor treatment composition.[0003]Chemical mechanical polishing (CMP) that is used to produce a semiconductor device is a technique that causes the processing target (polishing target) and a polishing pad to come in sliding contact with each other while pressing the processing target against the polishing pad, and supplying a chemical mechanical polishing aqueous dispersi...

AI Technical Summary

Benefits of technology

[0024]The semiconductor treatment composition according to one embodiment of the invention has an excellent filtration characteristic, thereby being superior in productivity. In addition, the semiconductor treatment composition according to the embodiment of the invention can reduce damage applied to a metal wire and the like included in the processing target, and can still effectively remove contaminants from the surface of the processing target.DETAILED DESCRIPTION OF THE EMBODIMENT

[0025]The exemplary embodiments of the invention are described in detail below. Note that the invention is not limited to the exemplary embodiments described below. The invention includes various modifications that may be implemented without departing from the scope of the invention.1. Semiconductor Treatment Composition

[0026]A semiconductor treatment composition according to one embodiment of the invention includes potassium, sodium, and a compound A represented by the following general formula (1), and has a potassium content MK (ppm) and a sodium content MNa (ppm) that satisfy MK / MNa=1×10−1 to 1×104. The semiconductor treatment composition may be a concentrated-type semiconductor treatment composition that is used after being diluted with a liquid medium (e.g., purified water and organic solvent), or may be a non-dilution-type semiconductor treatment composition that is used without being diluted. The term “semiconductor treatment composition” used herein includes both the concentrated-type semiconductor treatment composition and the non-dilution-type semiconductor treatment composition unless otherwise specified.

[0027]The semiconductor treatment composition may be used as a treatment agent such as a cleaning agent for removing particles, metal impurities, and the like present on the surface of the treatment target (polishing target) after completion of CMP, a resist stripper for removing a resist from a semiconductor substrate that has been processed using a resist, and an etchant for shallowly etching the surface of a metal wire or the like to remove a surface contaminant. Note that the term “treatment agent” used herein includes a cleaning agent for cleaning a semiconductor surface, a resist stripper, an etchant, and the like. Each component included in the semiconductor treatment composition is described in detail below.1.1 Potassium and Sodium

[0028]The semiconductor treatment composition includes potassium and sodium. It is generally considered that an alkali metal such as sodium and potassium is an impurity that should be removed as much as possible during a semiconductor production process (see JP-A-2000-208451, for example). However, it was found contrary to the above concept that it is possible to improve treatment performance without causing significant deterioration in semiconductor properties by utilizing a semiconductor treatment composition that includes potassium and sodium in a predetermined ratio when implementing a cleaning step that is performed after completion of CMP, a resist removal step, an etching step, and the like.

[0029]The semiconductor treatment composition has a potassium content MK (ppm) and a sodium content MNa (ppm) that satisfy MK / MNa=1×10−1 to 1×104, preferably MK / MNa=3×10−1 to 7×103, more preferably MK / MNa=5×10−1 to 5×103, and particularly preferably MK / MNa=1×10° to 4×103. It is considered that, when the content ratio of potassium to sodium is within the above range, it is possible to suppress a situation in which a metal material (e.g., copper and tungsten) that is exposed on the treatment target surface is etched to an excessive extent, and eluted during the semiconductor treatment step. If the content ratio of potassium to sodium in the semiconductor treatment composition exceeds the above range, sodium and potassium may adhere to and remain on the treatment target, and the electrical characteristics of the resulting semiconductor circuit (i.e., treatment target) may deteriorate, whereby a decrease in yield and the like may occur. If the content ratio of potassium to sodium in the semiconductor treatment composition is less than the above range, the balance with respect to the ionic product of a metal material (e.g., copper and tungsten) that is exposed on the treatment target surface, and sodium and potassium included in the semiconductor treatment composition may be impaired, and the metal material (e.g., copper and tungsten) may be etched to an excessive extent, whereby deterioration in the flatness of the treatment target surface and electrical characteristics may occur.

Problems solved by technology

A fatal device defect may occur if such polishing waste remains.

Since an iron ion included in the CMP slurry is easily adsorbed on the surface of the polishing target, the polishing target surface is easily contaminated with iron.

In this case, however, the polished surface is easily etched and damaged.

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