Control of power delivered to a multiple segment inject electrode

Abstract

An RF power supply system (200) for use with an electrode (60) in a plasma reactor system (10) capable of supporting a plasma (32) with a plasma load impedance (ZR), wherein the electrode comprises a plurality of electrode segments (62a,62b, . . . , 62n). The system comprises a master oscillator (210), and a plurality of RF power supply subsystems (220a, 220b, . . . 220n) each electronically connected thereto, and to respective ones of the electrode segments. Each RF power supply subsystem includes a phase shifter (224), an amplifier / power supply (230), a circulator (236), a directional coupler (242), and a match network (MN / L). The latter has a match network impedance. The system further includes a control system (184) electronically connected to each RF power supply subsystem. The control system dynamically changes the match network impedance for each subsystem to match the plasma load impedance, and also adjusts one or more of the phase shifters in response to an electrode segment receiving power from other electrode segments. A method of controlling the RF power supply system is disclosed, as is a method for processing a substrate (40) with a plasma processing system having the RF power supply system of the present invention.

Description

[0001]This a Continuation of International Application No. PCT / US01 / 09199, which was filed on Mar. 23, 2001, which, in turn, claims benefit of U.S. Provisional Application No. 60 / 192,508, which was filed Mar. 28, 2000.FIELD OF THE INVENTION[0002]The present invention relates to plasma reactor systems, and in particular to an RF power supply system for same that delivers radio frequency (RF) power to a segmented electrode in a controlled manner.BACKGROUND OF THE INVENTION[0003]Ionized gas or “plasma” may be used during processing and fabrication of semiconductor devices, flat panel displays and other products requiring etching or deposition of materials. Plasma may be used to etch or remove material from semiconductor integrated circuit wafers, sputter or deposit material onto a semiconducting, conducting or insulating surface. Creating a plasma for use in manufacturing or fabrication processes typically is done by introducing a low-pressure process gas into a chamber surrounding a w...

AI Technical Summary

Benefits of technology

[0015]The present invention provides a method and apparatus for controlling RF power delivered to each electrode segment in a segmented electrode and for differentiating between forward propagating and reverse propagating RF power. The present invention also allows for conventional current and voltage measurements in the power supply system associated with a multiple segment inject electrode.

[0016]A first aspect of the invention is an RF power supply system for use with an electrode in a plasma reactor system capable of supporting a plasma with a plasma load impedance (ZR), wherein the electrode comprises a plurality of electrode segments. The system comprises a master oscillator, and a plurality of RF power supply subsystems each electronically connected thereto, and to respective on

Problems solved by technology

This accounts for the coupling between the electrode segments, which affects the state of the plasma and hence the quality of the etch process.

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