Superconductor
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By using sapphire single crystal R plane as substrate 11 and a Pt plate as target, a Pt film 12 was deposited on the substrate by DC planar magnetron sputtering as shown in FIG. 1. Deposition was carried out at a sputtering power of 300 V.times.30 mA by using Ar gas pressurized to 8 Pa and maintaining the substrate temperature at 250.degree.-500.degree. C. to form a 0.1 .mu.m thick film. This Pt film was polycrystalline. On this Pt film 12 was deposited a compound film 13 by high frequency planer magnetron sputtering using sintered ErBa.sub.2 Cu.sub.4.sup...sub.5.sup.O.sub.8 as target. This sputtering deposition of compound film 13 was carried out under Ar gas pressure of 0.5 Pa at a sputtering power of 150 W for a period of one hour by maintaining the substrate temperature at 700.degree. C. to form a 0.5 .mu.m thick film.
This film showed a room-temperature resistance of 600 .OMEGA. and a superconducting transition temperature of 88 K.
Film formation on a glass coated substrate is de...
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