Method for growing high crystal quality indium nitride single-crystal epitaxial film

Abstract

The invention provides a method for growing high crystal quality indium nitride single-crystal epitaxial film characterized in that, the method comprises the following steps, selecting a substrate, growing a nitration layer onto the substrate through a molecular beam epitaxy method, lowering the temperature of the substrate, growing a buffering layer, finally elevating the temperature of the substrate, and growing indium nitride layer with high crystallizing quality.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to an epitaxial growth method of a high-quality indium nitride single crystal epitaxial film. Background technique [0002] III-V compound semiconductor indium nitride (InN) has received more and more attention and research due to its unique physical and chemical properties. Among III-V nitrides, InN has the smallest effective mass and theoretically has the highest carrier mobility, so it has broad application prospects in high-speed devices. At the same time, among III-V nitrides, indium nitride also has the smallest direct band gap, making it a suitable material for infrared wavelength light-emitting devices. However, the preparation of bulk single crystals of InN is very difficult at present, and there is no relevant report on the preparation of bulk single crystals so far. At the same time, due to the low decomposition temperature of InN and the lack of matching heterog...

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Problems solved by technology

[0003] Most of the InN epitaxial growth methods before the present invention use MBE or MOCVD to directly epitaxially grow InN on the substrate, or use single-layer AlN and GaN as a buffer layer, although this can solve the problem of InN epitaxial film and substrate lattice to a certain extent. However, due to the quality of the buffer layer, the thermal mismatch problem between the epitaxial InN layer and the buffer layer has not been well resolved, so that the crystal quality of the InN epitaxial film is not very high, and the surface is not smooth enough

At the same time, because the decomposition temperature of InN is relatively low, the requirements for the equilibrium pressure of N on the surface during the growth process are relatively high, so there will be a small amount of indium droplets in the InN epitaxial film, and there are problems in the optimization and control of growth conditions.

Due to the existence of these problems, the quality of InN epitaxial film single crystal is not very high, which cannot meet the requirements of device manufacturing.

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