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Digital CMOS built-in temperature sensor

A temperature sensor and digital technology, applied in thermometers, thermometer parts, instruments, etc., can solve problems such as the consumption of transistors and the influence of charging current

Inactive Publication Date: 2007-12-19
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

([6]Wang Nailong, Zhang Sheng and Zhou Runde, "A novel built-in CMOS Temperature Sensor for VLSICircuits", Chinese Journal of Semiconductors, Vol 25, No.3 Mar, 2004) The sensor in [4] The synthesis of [5] consumes more transistors, and the charging current of its capacitor is affected by the power supply voltage

Method used

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Examples

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Embodiment Construction

[0116] 1. Constant current source circuit

[0117] Accompanying drawing 1 has shown such a kind of circuit. EN is the control terminal, when EN is high, the circuit works. The capacitor charging current is generated using a self-biased threshold voltage reference circuit ([7] Paul R. Gray, Paul J. Hurst, Stephen N. Lewis and Robert G. Meyer, "Analysis and design of analog integrated circuits", New York: Wiley, c2001), for the T3 tube to choose a larger width-to-length ratio, the specific value of the charging current is:

[0118] I = V TN + 2 IL T 3 μ n C ox ...

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Abstract

The invention relates to a temperature sensor of a digital CMOS sheet in the field of temperature monitoring domain. It uses the linear relationship between the transistor critical voltage and the temperature to separately design two project temperature sensing circuit based on the relaxation oscillator and the Schmitt trigger. The accuracy of the two temperature sensors are below 1 degree. It adopts all CMOS structure at the same time.

Description

technical field [0001] The digital CMOS on-chip temperature sensor of the invention relates to design for thermal testing (DfTT) in integrated circuit design, on-chip real-time temperature monitoring and temperature protection. Background technique [0002] Since the successful development of integrated circuits in the 1950s, their functions and scales have developed rapidly. Over the past few decades, the integration level of integrated circuits has been increasing at the rate predicted by Moore's Law, doubling roughly every 18 months. Integrated circuits have developed from the original small-scale to today's very large-scale (VLSI) and very large-scale (ULSI) levels, and the feature size has also entered the deep submicron (DSM) and ultra-deep submicron (VDSM) stages, and can work at the level of GHz frequencies. Taking CPU manufacturer Intel as an example, the manufacturing process of its CPU has developed from 0.8 micron in the early 1990s to 0.09 micron today. [00...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01K1/14G01K7/01
Inventor 林赛华杨华中
Owner TSINGHUA UNIV
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