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Method for forming smaller contact hole using T-type pattern

A contact hole, smaller technology, used in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as increased circuit design complexity and cost

Inactive Publication Date: 2008-01-30
GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The phase shift mask is to add a layer of phase shift layer (phase shift layer) on the upper part of the mask, although optical proximity correction and phase shift mask can be used to make lines below submicron, but The manufacturing and testing of the mask plate, and the complexity of the circuit design have greatly increased the cost of the process

Method used

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  • Method for forming smaller contact hole using T-type pattern
  • Method for forming smaller contact hole using T-type pattern
  • Method for forming smaller contact hole using T-type pattern

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Embodiment Construction

[0022] The present invention relates to a method of using a T-shaped pattern to form a smaller contact hole. Please refer to FIG. 1 to FIG. 6 , which are cross-sectional views of various steps of a preferred embodiment of the present invention.

[0023] First, referring to FIG. 1, an oxide layer 12, a hard mask layer 14, and a chemically amplified photoresist layer (chemical amplified resist, CAR) 16 are sequentially formed on a semiconductor substrate 10, wherein the hard mask The material of layer 14 may be other materials such as silicon oxynitride (SiON) or silicon nitride, which are deposited by low-pressure chemical vapor deposition. Then, as shown in Figure 2, use a mask plate 18 with a larger contact hole pattern as a mask to expose the chemically amplified photoresist layer 16, because the chemically amplified photoresist layer 16 will After the hydroxyl groups on the alkali-soluble polyhydroxystyrene (polyhydroxy styrene) are covered with a protection group (protecti...

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Abstract

An oxide layer, a hard mask layer and chemistry enhanced type layer of photoresist are formed on semiconductor substrate. Using a atmosphere of containing ammonia makes ammonia ions catch hydrogen ions at top of chemistry enhanced type layer of photoresist. After being patternized, chemistry enhanced type layer of photoresist presents T type pattern. Further, comparing with other techniques, the method obtains smaller contact holes when etching contact holes is carried out for oxide layer.

Description

technical field [0001] The present invention relates to a method of forming a contact hole, in particular to a method of using a T-shaped pattern to form a smaller contact hole. Background technique [0002] With the trend of semiconductor process technology moving towards deep submicron (deep submicron), the resolution of the optical design of today's lithography system has reached the limit of the system, so the current general trend is to use specially designed masks Plates such as optical proximity correction (optical proximity correction, OPC) and phase shift mask (phase shift mask, PSM) to improve the resolution. [0003] When the width of the pattern is smaller than the wavelength of the exposure light source, for example, in a fine rectangular pattern, the four corners of the pattern will be rounded due to the diffraction of light, so it is necessary to use optical proximity correction technology such as adding auxiliary patterns or Change pattern lines. The phase ...

Claims

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Application Information

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IPC IPC(8): H01L21/30H01L21/027H01L21/308
Inventor 傅国贵周孟兴
Owner GRACE SEMICON MFG CORP