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Method for reducing lead wire figure by T-shaped photoresist pattern

A technology of photoresist pattern and photoresist layer, which is applied in the direction of microlithography exposure equipment, semiconductor/solid-state device manufacturing, photolithography process exposure device, etc., and can solve the problem of increased cost of circuit design

Inactive Publication Date: 2008-10-01
GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The phase shift mask is to add a layer of phase shift layer (phase shift layer) on the upper part of the mask. Although the optical proximity correction and the phase shift mask can produce deep submicron width lines, but its The complexity of making and testing the mask and circuit design greatly increases the cost of the process

Method used

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  • Method for reducing lead wire figure by T-shaped photoresist pattern
  • Method for reducing lead wire figure by T-shaped photoresist pattern
  • Method for reducing lead wire figure by T-shaped photoresist pattern

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Embodiment Construction

[0017] The present invention relates to a kind of method that uses T-type photoresist pattern to form the method for shrinking wire figure, please refer to Figure 1 to Figure 5 , which is a cross-sectional view of each step of a preferred embodiment of the present invention.

[0018] See first figure 1 , forming a chemically amplified photoresist layer (chemicalamplified resist, CAR) 12 on a semiconductor substrate 10, wherein the matrix resin (matrix resin) composition of the chemically amplified photoresist layer 12 is selected from cresolase phenolic (cresol) novolac) or polyhydroxystyrene (poly hydroxy styrene), and the photoacid generator (poly acid generator) of the chemically amplified photoresist layer 12 is selected from onium salt (onium salt) or S-three derivatives (S- triazine derivative), the crosslinking agent of the chemically amplified photoresist layer 12 is selected from melamine derivatives or benzyl alcohol derivatives.

[0019] Then, if figure 2 As sh...

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Abstract

A method for forming reduced wire pattern with T shaped photoetching glue pattern includes forming a chemical intensified photoetching glue layer (CIPGL) on a semiconductor substrate and presenting T shaped photoetching glue pattern by using gas containing ammonia to catch H ion in top of CIPGL to let CIPGL top have no chance join reaction when CIPGL patterning is carried out based on principle that exposed pattern can only be developed by joining its hydroxide radical in reaction when CIPGL patterning is carried out, and obtaining reduced wire pattern when wire pattern is deposited on said substrate.

Description

technical field [0001] The invention relates to a method for forming a conductor pattern, in particular to a method for using a T-shaped photoresist pattern to form a reduced conductor pattern. Background technique [0002] For many years, the development of integrated circuit technology has been in accordance with the so-called Moore's Law (Moore's Law), at the rate of doubling the number of transistors in the same chip area about every 18 months, continuously improving the integration of ICs to strengthen its Speed ​​and functionality. However, the resolution of the optical design of today's lithography system has reached the system limit, so the current general trend is to use specially designed masks such as optical proximity correction (OPC) and phase shift masks ( phase shift mask, PSM) to improve the resolution. [0003] When the pattern line width of the mask plate is smaller than the wavelength of the exposure light source, for example, in a fine rectangular patte...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20H01L21/00
Inventor 周孟兴傅国贵
Owner GRACE SEMICON MFG CORP