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Film transistor and manufacturing method of its lightly mixed drain area

A lightly doped drain, thin film transistor technology, applied in transistors, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as difficult mask pattern alignment, achieve the effect of improving production efficiency and simplifying manufacturing process steps

Inactive Publication Date: 2008-04-30
CHUNGHWA PICTURE TUBES LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the above method of manufacturing the lightly doped drain region is likely to cause difficulties in the pattern alignment of the mask, and even through the self-aligned doping method, the complexity of the manufacturing process steps cannot be avoided.

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  • Film transistor and manufacturing method of its lightly mixed drain area
  • Film transistor and manufacturing method of its lightly mixed drain area
  • Film transistor and manufacturing method of its lightly mixed drain area

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Embodiment Construction

[0058] Please refer to Figure 2A~2I , which sequentially represent a schematic diagram of a manufacturing process of a thin film transistor of the present invention.

[0059] First, if Figure 2A As shown, a buffer layer 202 is selectively formed on the substrate 200 , and an amorphous silicon layer 210 a is formed on the buffer layer 202 . Wherein the material of the substrate 200 is, for example, glass, and the material of the buffer layer 202 is, for example, silicon dioxide. Figure 2B ), and when the substrate 200 contains metal ions such as sodium, it can be used to prevent the metal ions in the substrate 200 from contaminating the polysilicon layer 210 (shown in Figure 2B ).

[0060] Next, if Figure 2B As shown, dehydrogenation treatment is performed, and laser annealing treatment is performed on the amorphous silicon layer 210 a , which is, for example, an excimer laser annealing process, so that the amorphous silicon layer 210 a is recrystallized into a polysilic...

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Abstract

This invention relates to a method for manufacturing a light doped drain region of a film transistor, which first of all forms a polysilicon layer on the base plate then forms a grating insulation layer on the polysilicon layer, after that forms a buffer and a grating on the grating insulation layer, in which, the grating is set on the buffer and exposes part of the buffer, then carries out a doping manufacture technology and forms a light doped drain region in the polysilicon layer corresponding to the lower part of the buffer exposed by the grating.

Description

technical field [0001] The present invention relates to a semiconductor element and its manufacturing method, and in particular to a thin film transistor and its lightly doped drain region manufacturing method. Background technique [0002] Early polysilicon thin film transistors were manufactured using Solid Phase Crystallization (SPC) manufacturing process, but the manufacturing process temperature is as high as 1000 degrees Celsius, so a quartz substrate with a higher melting point must be used. However, because the cost of quartz substrates is much higher than that of glass substrates, and the size of the substrate is limited, the panels are only about 2 to 3 inches, so in the past only small panels could be developed. In recent years, with the continuous advancement of laser technology, an Excimer Laser Annealing (ELA) manufacturing process has been developed, which uses laser beams to irradiate amorphous silicon films to melt the amorphous silicon films. Recrystalliza...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/786H01L21/336
Inventor 张锡明
Owner CHUNGHWA PICTURE TUBES LTD