The cleaning method for removing the impure ion from the semiconductor pipe core assembly

A semiconductor tube and impurity removal technology, which is used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problem that the quality of semiconductor diodes cannot be further improved, the reverse cut-off performance of semiconductor diodes is unstable, and the unidirectional conduction effect is lost. problem, to achieve the effect of less pollution, eliminating tip discharge and improving stability

Inactive Publication Date: 2008-10-22
江苏佳讯电子有限公司 +2
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When for the pickling treatment of the surface of the semiconductor die assembly after welding, a large amount of heavy metal ions will be adsorbed on the grain surface of the semiconductor die assembly during the welding process of the crystal grain and the pin, so this cleaning method and The cleaning agent cannot remove the heavy metal ions on the surface of the crystal grain of the semiconductor die assembly with a simple method and low cost
However, semiconductor diodes are greatly affected by temperature when they work. The reverse current IR of semiconductor diodes made by the current cleaning method can only be controlled at about 5μA. The reverse cut-off performance of semiconductor diodes is unstable and is easily broken down by reverse voltage. , lose the one-way conduction effect, so the quality of the semiconductor diode cannot be further improved
In addition, with the current cleaning method, the semiconductor die assembly uses different cleaning tanks in different cleaning stages, so the semiconductor die assembly needs to be loaded and unloaded by a special mechanism, which is not only cumbersome to operate, but also increases auxiliary production. time

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0011] The cleaning method of the semiconductor die assembly of the present invention to remove impurity ions, (1), the semiconductor die assembly to be cleaned is inserted in the cleaning tank, the corrosive agent is poured into the cleaning tank, and the corrosive agent is: Analytical grade or superior pure 20%~30% nitric acid, 20%~30% hydrofluoric acid, 8%~15% sulfuric acid and 30%~40% glacial acetic acid mixed solution, the time is controlled within 1~10min, The cleaning tank tilts to remove the corrosive agent, sprays the surface of the semiconductor die assembly with high-pressure deionized water, and quickly rinses the surface of the semiconductor die assembly obliquely. (2) After the cleaning tank enters the next station and resets, pour the pre-cleaning agent into the cleaning tank. The pre-cleaning agent is analytical grade or pure 15% to 35% phosphoric acid, 15% to 35% pure A mixed solution of hydrogen peroxide and 40% to 60% deionized water, while removing metal io...

Embodiment 2

[0013] The cleaning method of the semiconductor die assembly of the present invention to remove impurity ions, (1), insert the semiconductor die assembly to be cleaned in the cleaning tank, pour the corrosive agent into the cleaning tank, and the corrosive agent It is a mixed solution of analytical grade or superior pure 23% to 28% nitric acid, 23% to 28% hydrofluoric acid, 10% to 12% sulfuric acid and 32% to 38% glacial acetic acid, and the time is controlled within 5 to 10 minutes , The cleaning tank tilts to remove the etchant, sprays the surface of the semiconductor die assembly with high-pressure deionized water, and quickly rinses the surface of the semiconductor die assembly obliquely. (2) The cleaning tank enters the next station and resets. Pour the pre-cleaning agent into the cleaning tank. The pre-cleaning agent is analytical grade or pure 20% to 30% phosphoric acid, 20% to 30% hydrogen peroxide Mixed solution with 40%~50% deionized water, while removing metal ions ...

Embodiment 3

[0015]The cleaning method of the semiconductor die assembly of the present invention to remove impurity ions, (1), insert the semiconductor die assembly to be cleaned in the cleaning tank, pour the corrosive agent into the cleaning tank, and the corrosive agent It is a mixed solution of analytical grade or superior pure 20%~30% nitric acid, 20%~30% hydrofluoric acid, 8%~15% sulfuric acid and 30%~40% glacial acetic acid, the time is controlled within 1~10min, and the cleaning The tank is tilted to remove the etchant, and the surface of the semiconductor die assembly is sprayed with high-pressure deionized water to quickly rinse the surface of the semiconductor die assembly. (2) The cleaning tank enters the next station, resets and pours the pre-cleaning agent into the cleaning tank. The pre-cleaning agent is analytical grade or pure 15% to 35% phosphoric acid, 15% to 35% hydrogen peroxide and A mixed solution of 40% to 60% deionized water, while removing metal ions and organic ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The related cleaning method for impurity in semiconductor die assembly comprises: inserting the target assembly into the cleaning tank, putting into corrosive agent to remove the organic sewage on objective surface in 1-10min; inclining the tank to pour out the agent and fast clean the objective with deionized water; pouring the first cleaning agent into the tank to remove the metal ion and organic and form oxidation layer in 1-5min, then pouring out the agent and cleaning fast with deionized water; pouring the second cleaning agent in tank to remove heavy metal ion and organic in 1-5min, then pouring out the agent and cleaning fast with deionized water; finally, using ultrasonic wave to clean and dry the objective. This invention is low cost and benefit to improve semidiode performance.

Description

technical field [0001] The invention relates to a cleaning method for a semiconductor diode, in particular to a cleaning method for removing impurity ions from a semiconductor die assembly. Background technique [0002] Semiconductor diodes, as small discrete components, have multiple functions such as rectification, detection, limiting and protection, and are widely used in various circuits. Conventional semiconductor diodes first cut the ingot into wafers, and then cut the wafers into grains. The two ends of the grains are respectively welded with copper leads by tin solder to form a semiconductor die assembly. After pickling, gluing, injection molding, Electroplating, directing, printing, testing and packaging complete the production of semiconductor diodes. In the manufacturing process of the semiconductor diode, whether the semiconductor die assembly is cleaned or not directly affects the performance of the semiconductor diode. The conventional cleaning process is to ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/00
Inventor 吕全亚张心波张国荣
Owner 江苏佳讯电子有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products