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An underlay substrate material for the illuminating and heat radiating of a semiconductor

A technology for lighting heat dissipation and substrate substrate, which is applied to semiconductor devices, semiconductor/solid-state device components, electric solid-state devices, etc. sexual effect

Inactive Publication Date: 2009-03-04
于深 +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The invention provides a semiconductor lighting heat dissipation substrate substrate material to solve the problem of poor heat dissipation effect existing in the current semiconductor lighting heat dissipation substrate substrate material

Method used

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  • An underlay substrate material for the illuminating and heat radiating of a semiconductor
  • An underlay substrate material for the illuminating and heat radiating of a semiconductor
  • An underlay substrate material for the illuminating and heat radiating of a semiconductor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0097] The preparation of embodiment 1 beryllium oxide BeO

[0098] The raw material of beryllium oxide BeO is obtained by activation sintering process, and beryllium hydroxide [Be(OH) 2 ] The active BeO powder is decomposed by pre-calcination, and the pre-calcination needs to be carried out in a hydrogen atmosphere at 1000-1200 °C.

Embodiment 2

[0100] 1. Ingredients: by weight percentage,

[0101] Beryllium oxide BeO 97%, the particle diameter is 10-20μm,

[0102] Alumina Al 2 o 3 1.6%, the particle diameter is 10-20μm,

[0103] Magnesium oxide MgO 1.1%, particle diameter 10-20μm,

[0104] Calcium oxide CaO 0.3%, the particle diameter is 10-20μm,

[0105] 2. Forging

[0106] Add alumina Al to beryllium oxide BeO before calcination 2 o 3 , in a sealed container, calcined at a high temperature of 1700 degrees Celsius, added magnesium oxide after 10 minutes, added calcium oxide after 20 minutes, and then calcined for 40 minutes to obtain a beryllium oxide material with a purity of 97%;

[0107] 3. Ball milling and mixing

[0108] Put the obtained beryllium oxide material into a ball mill for grinding to produce particles of 10-20 μm;

[0109] 4. Porcelain billet forming

[0110] After the ground beryllium oxide material is molded, it is extruded with a molding machine to make a porcelain blank;

[0111] Five...

Embodiment 3

[0116] 1. Ingredients: by weight percentage,

[0117] Beryllium oxide BeO 98%, the particle diameter is 10-20μm,

[0118] Alumina Al 2 o 3 1.0%, the particle diameter is 10-20μm,

[0119] Magnesium oxide MgO 0.8%, the particle diameter is 10-20μm,

[0120] Calcium oxide CaO 0.2%, the particle diameter is 10-20μm,

[0121] 2. Forging

[0122] Add alumina Al to beryllium oxide BeO before calcination 2 o 3 , in a sealed container, calcined at a high temperature of 1600 degrees Celsius, added magnesium oxide after 10 minutes, added calcium oxide after 20 minutes, and then calcined for 40 minutes to obtain a beryllium oxide material with a purity of 97%;

[0123] 3. Ball milling and mixing

[0124] Put the obtained beryllium oxide material into a ball mill for grinding to produce particles of 10-20 μm;

[0125] 4. Porcelain billet forming

[0126] After the ground beryllium oxide material is molded, it is extruded with a molding machine to make a porcelain blank;

[012...

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Abstract

The invention discloses an illuminating radiation substrate base plate material of semiconductor, which comprises the following steps: allocating raw material with 97-99% beryllium oxide, 0. 5-1. 6% alumina, 0. 4-1. 1% magnesia and 0. 1-0. 3% calcium oxide; adding beryllium oxide in the alumina before sintering; sintering under 3700-3900 deg. c in the sealing container; adding magnesia and calcium oxide to sinter 60 min; obtaining the beryllium oxide material with purity at 97-99%; milling to blend; moulding the ceramic blank; punching sheet; sintering to obtain the product. The invention adopts beryllium oxide on the chip packing radiation material to do once manufacturing and moulding with heat conductivity at 230K, which solves the key technique of radiation and antistatic to generalize the effect and reach the corresponding illuminating standard.

Description

technical field [0001] The invention belongs to a light-collecting substrate material for a heat dissipation substrate of a semiconductor lighting chip and a preparation method thereof. Background technique [0002] Semiconductor lighting is one of the most promising high-tech fields in the 21st century. Since the 1990s, with the rise of the third-generation semiconductor materials represented by gallium nitride (CaN), the research of blue and white light-emitting diodes (LEDs) has been successful. As a new solid-state light source, semiconductor lighting sources will become the successor in the history of human lighting. Another revolution after incandescent and fluorescent lamps. However, as a high technology, there must be supporting key technical support and supporting technical accessories. The heat dissipation substrate material technology is one of the key technologies. [0003] The luminous wavelength of LED varies with temperature to 0.2-0.3nm / °C, and the spectral...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/08C04B35/622H01L33/00H01L23/373
Inventor 于深李绰范黎
Owner 于深