Two-dimensional display semiconductor structure and producing method thereof

Abstract

This invention relates to a semiconductor structure and its manufacturing method for a plane display including a base plate with an active element region and a capacitance region, a patternized polysilicon layer matched on the active element region and the capacitance region of said base plate including a channel region and a source region and a drain region at both sides of the channel region, a grid stacking layer matched on said channel region and a capacitance stacking layer matched on the polysilicon layer of said capacitance region, in which, both the grid stacking layer and the capacitance stacking layer include a first dielectric layer, a first conduction layer, a second dielectric layer and a second conduction layer, a third dielectric layer matched to said polysilicon layer, the grid stacking layer and the capacitance stacking layer, the third dielectric layer includes a contact window, a pixel electrode matched on the third dielectric layer and connected to the polysilicon layer of the drain region via said contact window.

Description

technical field [0001] The present invention relates to a semiconductor structure of a flat display and a manufacturing method thereof, in particular to a semiconductor structure and a manufacturing method of a flat display suitable for increasing capacitance. Background technique [0002] Thin film transistors are commonly used active elements in active matrix flat panel displays, and are used to drive devices such as active liquid crystal displays, active organic electroluminescence displays, and image sensors. Generally, according to the composition of the semiconductor layer of the thin film transistor, thin film crystals can be divided into polysilicon thin film transistors and amorphous silicon thin film transistors. [0003] In order to achieve high-precision element and pixel arrangement, polysilicon has gradually replaced amorphous silicon and has become the mainstream of thin film transistor technology. Generally, a low temperature polysilicon (LTPS) process is us...

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Problems solved by technology

[0005] However, the manufacturing process of low-temperature polysilicon liquid crystal displays using this six-pass photolithography process is quite lengthy and complicated, and problems such as alignment deviation or inaccuracy are prone to occur due to the use of multi-pass photolithography processes

In addition, directly using masks to define lightly doped regions and heavily doped regions will also increase the complexity of the process and fail to reduce costs and increase yields

Therefore, this method of manufacturing low-temperature polysilicon liquid crystal displays still needs to be further improved

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