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Preparation method of thin film transistor matrix substrate

A technology of a thin film transistor and a manufacturing method, which is applied in the field of manufacturing a thin film transistor matrix substrate, can solve problems such as difficult control, and achieve the effects of reducing damage, improving device characteristics, and reducing manufacturing costs

Active Publication Date: 2009-04-01
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Because there must be two different photoresist heights in the same area, the photoresist angle (taper angle) and the photoresist thickness h1 on the channel area will affect the result of subsequent etching, so the control of the two is very important, but in actual processing very difficult to control

Method used

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  • Preparation method of thin film transistor matrix substrate
  • Preparation method of thin film transistor matrix substrate
  • Preparation method of thin film transistor matrix substrate

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Embodiment Construction

[0024] Please refer to FIG. 2A to FIG. 2F . FIG. 2A to FIG. 2F are schematic cross-sectional views showing a manufacturing process of a reverse-staggered channel etch-protected transistor matrix substrate according to a preferred embodiment of the present invention. Please refer to FIG. 2A, on the transparent substrate 200, a conductive layer is defined by a mask process to form the gate electrode 202, the lower electrode 204 of the storage capacitor, and the signal electrode 206 to connect with the gate electrode pad 208 and the signal electrode. MAT 209. The transparent substrate 200 may be a glass substrate; the material of the conductor layer may be a group consisting of aluminum, molybdenum, copper, an alloy formed by any combination thereof, and metal nitride. The conductor layer can be a single-layer or multi-layer structure formed of the aforementioned materials.

[0025] Please refer to FIG. 2B, a gate dielectric layer 210, a semiconductor layer 212 and a protective ...

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Abstract

The invention discloses a method for making the thin film transistor matrix base plate, which uses the first mask process to definite the riddle electrode and the signal electrode and uses the second mask process to definite the communication channel area, the riddle electrode hole area, the signal electrode hole area and the wire receiving pad area with different light resisting layer thickness. It uses the third mask process to definite the source end, the leakage end, the upper layer signal electrode, the picture element electrode, the riddle electrode receiving pad and the signal electrode receiving pad.

Description

technical field [0001] The invention relates to a manufacturing method of a liquid crystal display panel, and in particular to a manufacturing method of a thin film transistor matrix substrate. Background technique [0002] In recent years, optoelectronic-related technologies have been continuously introduced, coupled with the arrival of the digital age, which has further promoted the vigorous development of the liquid crystal display market. Liquid crystal displays have the advantages of high image quality, small size, light weight, low driving voltage, and low power consumption, so they are widely used in personal digital assistants (PDAs), mobile phones, video recorders, notebook computers, desktops, etc. Consumer communication or electronic products such as large-scale displays, car displays, and projection TVs, and gradually replace cathode ray tubes and become the mainstream of displays. [0003] Liquid Crystal Display (LCD) is a display device that utilizes liquid cr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/1368H01L21/027
Inventor 李刘中
Owner AU OPTRONICS CORP