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Growth of silicon-nitride film

A growth method and a technology of silicon nitride film, which can be applied in the direction of gaseous chemical plating, coating, electrical components, etc., can solve the problems of poor filling ability and inability to meet process requirements, etc.

Active Publication Date: 2009-04-01
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the prior art, the silicon nitride film is grown by medium-density plasma chemical vapor deposition or furnace tube, and its filling ability is very poor.
The filling ability in a small area (0.2um) is not good and cannot meet the process requirements

Method used

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  • Growth of silicon-nitride film
  • Growth of silicon-nitride film
  • Growth of silicon-nitride film

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Embodiment Construction

[0014] The present invention will be further described below in conjunction with the accompanying drawings and embodiments. use figure 2 The method for growing a silicon nitride film in a high-density plasma chamber as shown in figure 1 As shown, first, silane and nitrous oxide are passed through the high-density plasma cavity, and at the same time, the plasma is activated to stimulate molecular growth, and the silane and nitrous oxide form a silicon nitride film in the high-density plasma cavity.

[0015] In the growth of silicon nitride film, the density of plasma is very high, generally 1E11-1E12 ions per cubic centimeter; the temperature is about 400 degrees. During growth, the thickness of the silicon nitride film is determined by time.

[0016] Such as image 3 , 4 As shown, the new method uses a high-density plasma process to grow silicon nitride, which can easily fill such small areas. Pass silane and nitrous oxide or ammonia gas in the existing high-density plas...

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Abstract

The method comprises: ventilating the silane and nitrous oxide gas or the silane and ammonia gas into the cavity of high density plasma body to form a layer of silicon nitride film in the cavity of high density plasma body. By using the invention, the deposition and the etching can be made at same time, and the deposition tip can be removed at the time of etching to increase the filling capacity in a sub-region.

Description

technical field [0001] The invention relates to a semiconductor process method, in particular to a method for growing a silicon nitride film. Background technique [0002] In the manufacture of VLSI, the high-density plasma process is used in the growth of oxide film. The gas is passed through the cavity and radio frequency energy is applied to ionize the molecules, and the molecules are grown and etched according to a certain ratio, thereby improving the oxidation film in a small area. (0.2um) filling capacity. But this method has never been used in the growth of silicon nitride films. Silicon nitride has good properties to solve the inherent problems of other barrier layers, such as low stress and high etch selectivity, and is compatible with existing processes. [0003] In the manufacture of VLSI, the nitride film also needs high filling capacity in a small area (0.2um). In the prior art, the silicon nitride film is grown by medium-density plasma chemical vapor deposit...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/318C23C16/34
Inventor 陈华伦
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP