Light-emitting device, method for producing same, and display
A technology for light-emitting elements and light-emitting bodies, which is applied in lighting devices, electrical components, electroluminescent light sources, etc., can solve the problems of light-emitting attenuation, difficulty in achieving high brightness, and insufficient surface uniformity of light-emitting brightness.
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Embodiment 1
[0341] use figure 1 The light-emitting element of Example 1 of the present invention will be described. Since this light-emitting element has the same configuration as that of the light-emitting element in Embodiment 1, description of the configuration will be omitted. In this light emitting element, a commercially available glass substrate with an ITO film is used as the transparent substrate 8 on which the electron injection electrode 7 is formed. In addition, on the metal oxide semiconductor porous body, a TiO2 thin film porous body is used. As the light-emitting organic material 5 supported on the surface of the porous body, 3-(2-benzothiazolyl)-7-diethylaminocoumarin-4-carboxylic acid (BDCC) was used. A glass substrate was used for the substrate 1 , Al was used for the hole injection electrode 2 , and PVK was used for the hole transport layer 3 .
[0342] Next, a method of manufacturing the light-emitting element will be described with reference to FIG. 2 . This ligh...
Embodiment 2
[0358] use Figure 5 A display device in Embodiment 2 of the present invention will be described. This display device 40 has the thin film transistor 21 similarly to the display device in the third embodiment, but differs in that it has pixels 41R, 41G, and 41B of three colors of RGB. In each of the pixels 41R, 41G, and 41B, the light-emitting organic material is changed so as to correspond to each of them. In addition, in this display device 40 , there is provided a pixel separation region 42 that separates each pixel. In the pixel isolation region 42 , black dye is carried on the surface of the metal oxide semiconductor particle 4 to isolate each pixel.
[0359] A method of manufacturing the display device 40 will be described. Since the display device 40 is a device in which the light emitting elements of the first embodiment are arranged two-dimensionally, substantially the same method of manufacturing the light emitting elements of the first embodiment can be performed...
Embodiment 3
[0361] use figure 1 A light-emitting element in Example 3 of the present invention will be described. In this light-emitting element, compared with the light-emitting element in Example 1, CuO and Cu 2 The difference is that the mixture of O replaces A1. As a result, the hole injection electrode is black. The hole injection electrode was formed by the sputtering method in the same manner as the hole injection electrode of Example 1.
[0362] The evaluation of contrast is to irradiate 1001x white light from an angle of 45 degrees with respect to the light-emitting surface of the device, and the light-emitting brightness is 300cd / m 2 Under the conditions, the ratio of the luminance when the light-emitting element is turned on / off to the non-light-emitting luminance is used. The contrast ratio in this Example 3 was 300:1 or more. This is better than Comparative Example 1 described later.
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