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Method for preparing film from material and its organic electroluminescent device

A film-forming method and luminescent technology, which are applied in the direction of electroluminescent light sources, electric light sources, electrical components, etc., can solve problems such as short circuits, no bright spots, and low device performance, so as to achieve good device performance, increase film-forming speed, and improve The effect of production efficiency

Active Publication Date: 2009-06-03
BEIJING VISIONOX TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In the field of organic electroluminescence and other fields, the requirements for the compactness and continuity of various functional layer films in the device are very high. Defects in the functional layer film in the device will cause many problems such as no bright spots, short circuits, etc., and the performance of the device is low.

Method used

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  • Method for preparing film from material and its organic electroluminescent device
  • Method for preparing film from material and its organic electroluminescent device
  • Method for preparing film from material and its organic electroluminescent device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Example 1: Preparation of dual source AlQ film with same speed

[0020] 1. Preparation of AlQ material and evaporation source: Put the same weight of AlQ material into two same crucibles, put them into different evaporation sources in the same vacuum chamber, and evacuate to 1.6×10 -4 Pa.

[0021] 2. Preparation of dual-source AlQ film at the same speed: place the silicon substrate with a clean and flat surface in the vacuum chamber, and transfer it to the chamber containing the AlQ material, and vacuum to 1.6×10 -4 Pa, adjust the deposition rate of the AlQ material in the two evaporation sources, make the deposition rate of the AlQ material of the two evaporation sources basically the same, both are 0.25nm / s, start the deposition, observe the film thickness detector of the two AlQ evaporation sources The film thickness indicates that the deposition is stopped at the same time when the film thickness of the two AlQ evaporation sources reaches 60nm.

Embodiment 2

[0022] Example 2 Preparation of dual source AlQ film with different speed:

[0023] The preparation process is the same as that in Example 1, except that during the evaporation process, the evaporation rate of the dual source is controlled to 0.4 nm / s and 0.1 nm / s, respectively.

Embodiment 3

[0030] Example 3: Preparation of dual source AlQ device with same speed

[0031] 1. Cleaning the glass substrate with ITO pattern pre-engraved: Use hot detergent ultrasonic and deionized water ultrasonic method to clean the glass substrate with ITO pattern pre-engraved, and dry it in a clean oven after cleaning.

[0032] 2. Transfer the substrate into the vacuum chamber and vacuum to 1.6×10 -4 Pa.

[0033] 3. Deposit a layer of hole transport material NPB on the ITO substrate with a deposition rate of 0.2nm / s and a film thickness of 50nm.

[0034] 4. A layer of organic luminescent material AlQ is deposited on the hole transport material NPB using a dual-source same-speed film forming method. The film thickness of AlQ is 60nm, and the deposition rate of dual-source AlQ is 0.25nm / s.

[0035] 5. Preparation of LiF layer: transfer the substrate to the chamber where the metal cathode is prepared, and vacuum to 1.6×10 -4 Pa, deposit a layer of LiF on the AlQ layer with a thickness of 0....

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Abstract

A method for preparing material to be film uses multiple evaporation source to evaporate one material and with different evaporation rates of multiple evaporation sources. An organic electro-fluorescence component has at least one material being prepared by multiple source evaporation. The method can form film in high rate and the prepared organic electro- fluorescence component applies low voltage and high brightness and long service time.

Description

Technical field [0001] The invention relates to a method for forming a film of a material, in particular to a method for forming a film of a material in an organic electroluminescence device and an organic electroluminescence device made by the method. Background technique [0002] In order to speed up the film formation speed of the material in the device, a method of increasing the film formation temperature to increase the deposition rate of the material is usually adopted. However, as the temperature of the material increases, the particle diameter of the evaporated material becomes larger, which reduces the density and continuity of the film. And when the evaporation temperature is too high, the stability of the evaporation deposition of the material will also decrease, and when the temperature is too high, the material will spray out the evaporation source intermittently. [0003] When evaporating at a certain temperature, the particle size of the material in the film layer...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H05B33/10H05B33/14C23C14/24C23C14/12
Inventor 邱勇张德强张祝新高裕弟
Owner BEIJING VISIONOX TECH
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