X ray diffraction instrument and method for detecting macro stress in micro area

A macro-stress and micro-area technology, applied in the direction of measuring device, measuring force, using mechanical device, etc., can solve the problems of difficult macro-stress detection, analysis and detection, inability to stress change gradient and stress distribution inhomogeneity, etc.

Inactive Publication Date: 2009-06-24
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Due to the large X-ray irradiation area (i.e. analysis and detection area) of this type of instrument, for example, the minimum detection area of ​​a special X-ray stress detector is: 2mm×3mm=6mm 2 In many cases, it is larger than the detectable surface of the above-mentioned thin-film devices and precision instrument parts, so it is difficult to achieve effective macroscopic stress detection, and of course it is impossible to analyze the stress change gradient and stress distribution inhomogeneity of the above-mentioned tiny devices detection
And the special equipment has a single function and the cost is also high

Method used

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  • X ray diffraction instrument and method for detecting macro stress in micro area
  • X ray diffraction instrument and method for detecting macro stress in micro area
  • X ray diffraction instrument and method for detecting macro stress in micro area

Examples

Experimental program
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Effect test

Embodiment 1

[0032] Embodiment 1 The self-made device in the present invention—a rotating detection platform for macroscopic stress detection in micro-regions by the roll method.

[0033] See figure 1 , in the selection of D8C 2 In the case of a diffractometer, the length, width and height of the sample carrier can be selected between 80mm and 100mm. The rotating detection platform of the present invention can be installed on the D8C precisely and conveniently 2 The three-axis translational sample carrier of the equipment is installed on the D8C 2 The function of the device and the detection accuracy are not affected in any way. figure 1 Among them, 1 is the table top, that is, the table top of the rotating detection table, 2 is the roll axis, that is, the straight line AB, 3 is the sample to be tested, I 0 and I are incident x-rays and diffracted x-rays. Point O is the X-ray irradiation point (that is, the macroscopic stress detection point).

[0034] The tested sample and the rotat...

Embodiment 2

[0035] Example 2 Detection of Macroscopic Stress Variation Gradient in the Weld Seam Area of ​​Diffusion Welded Parts by Expansion Difference

[0036] The welded center column is 10mm Cu alloy, the inner diameter of the outer ring Ti alloy is 10mm. The thickness of the weldment is 5mm. The central column and the outer ring are closely matched, and the expansion difference diffusion welding is realized under the condition of 850 degrees Celsius in vacuum.

[0037] Choose to measure the gradient of stress within 10mm in the direction perpendicular to the weld. According to the implementation steps of the micro-area macro stress detection of the aforementioned roll method of the present invention, with the weld seam as the center, 17 test points are selected in the range of ± 5mm, and each test point must be at α=0°; α=16 °; α = 24°; α = 30° to make a set of data, and focus precisely under the microscope, the experimental conditions are guaranteed to be exactly the same.

[...

Embodiment 3

[0041] Example 3 Detection of stress distribution inhomogeneity of a diamond film grown by CVD on a Mo substrate.

[0042] The electron-enhanced chemical vapor deposition (EA-CVD) method is used to grow a diamond polycrystalline film on the Mo substrate at 800-900 degrees Celsius, with a thickness of 0.3mm.

[0043] According to the implementation steps of the small area stress detection of the roll method of the present invention, a 2mm × 2mm detection area is selected on the film, and 50 detection points are randomly selected in the area, and each test point must be at α=0°; α=16 °; α = 24°; α = 30° to make a set of data, and focus precisely under the microscope, the experimental conditions are guaranteed to be exactly the same, and the macroscopic stress in the same direction is measured.

[0044] The occurrence probability of different stress values ​​is calculated from the test results to characterize the inconsistency of the stress in the test area (see image 3 ).

[...

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Abstract

The X-ray diffraction device and method for detecting macroscopic stress in a micro region of the invention belong to the testing field. The setup, consisting of an x-ray diffractometer, is equipped with a rotating detection stage. Detection steps: adjust the surface of the tested sample on the rotating detection platform to be perpendicular to the diffraction circle platform of the X-ray diffractometer, and set the roll rotation axis on the intersection line between the diffraction circle plane and the sample surface; select the stress detection point O under the microscope; Angle Φ sets the stress detection direction; determine the roll angle α; re-observe the stress detection point O under the microscope, adjust the detection point O to coincide with the center of the diffraction circle; measure the selected diffraction crystal plane; Several 2θα data; calculate the macroscopic stress value in the direction perpendicular to the roll axis AB in the small area of ​​point O. The invention can detect the macroscopic stress in any specified direction in any specified tiny area of ​​the sample, and detect the stress change gradient and stress distribution inhomogeneity.

Description

technical field [0001] The invention belongs to the field of testing, in particular to an X-ray diffraction testing method for macroscopic stress variation gradients and macroscopic stress distribution inhomogeneities in tiny regions. Background technique [0002] For semiconductor photosensitive and gas-sensitive thin film devices, large-scale electronic integrated devices, and some small precision instrument parts, macroscopic stress is unavoidable in the manufacturing process. This macroscopic stress not only damages the mechanical properties of the device but also has a non-negligible impact on the optoelectronic properties of the device. Therefore, it is necessary to accurately detect this macroscopic stress. [0003] Macroscopic stress x-ray inspection of current materials is usually recommended on wide-angle x-ray diffractometers or dedicated x-ray stress instruments. For its detection method, see "X-ray Stress Measurement Method", An Zhengzhi, Wang Wenyu, Jilin Uni...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N19/00G01L1/25
Inventor 高忠民高宇顾滨兵李向山
Owner JILIN UNIV
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