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Cleaning liquid composition for semiconductor substrate

A technology of composition and washing liquid, applied in detergent composition, non-surface-active detergent composition, organic non-surface-active detergent composition, etc., can solve problems such as Low-K film damage, and achieve effective and good removal The effect of wettability

Inactive Publication Date: 2009-07-15
KANTO CHEM CO INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, after the present application was filed, a composition containing an organic acid, water, an organic solvent, and a corrosion inhibitor was disclosed (refer to Patent Document 6). Removal of metal contamination without any disclosure
[0010] In addition, after the present application was filed, someone disclosed a cleaning solution composition for semiconductor substrates with a low dielectric constant film, which uses organic acids, water, and ethylene oxide type surfactants as essential components, and may further contain alkyl alcohol ( Refer to Patent Document 7), but all examples are compounds containing organic acids, water, and surfactants. Like Patent Document 4, there is a possibility of damage to the Low-K film.

Method used

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  • Cleaning liquid composition for semiconductor substrate
  • Cleaning liquid composition for semiconductor substrate
  • Cleaning liquid composition for semiconductor substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0060] Using water as a solvent, cleaning liquid compositions with the compositions shown in Tables 1 to 3 were prepared and used for the measurement of contact angle, detergency and refractive index.

[0061] Contact Angle to Hydrophobic Substrate Surface 1: Bare Silicon

[0062] Table 1 shows the results of evaluating the wettability to the substrate by measuring the contact angle when the drop hits the surface of the bare silicon substrate with a contact angle measuring device.

[0063] Table 1

[0064]

[0065] Contact angle to hydrophobic substrate surface 2: Organic film (SiLk)

[0066] Table 2 shows the contact angle when dropping onto the surface of SiLk (manufactured by Dow Chemical), which is an organic Low-K film, using a contact angle measuring device.

[0067] Table 2

[0068]

[0069] Contact angle to hydrophobic substrate surface 3: Low-K film composed of SiOC

[0070] Table 3 shows the wettability evaluation results to the substrate by measuring ...

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Abstract

The present invention relates to a cleaning liquid having a high particle removal ability for removing particles from a hydrophobic surface such as a bare silicon surface or a Low-K film. The present invention improves the wettability of a washing liquid to a hydrophobic surface by combining a specific organic solvent in an aqueous solution of an organic acid such as oxalic acid.

Description

technical field [0001] The present invention relates to a cleaning solution composition for cleaning semiconductor substrates, especially a cleaning solution suitable for removing particle contamination or metal contamination adsorbed on the surface of a hydrophobic substrate such as bare silicon or a low dielectric constant (Low-K) film combination. Background technique [0002] With the high integration of ICs, since trace impurities have a great impact on the performance and yield of equipment, strict pollution control is required. That is, since strict control of particle contamination and metal contamination of the substrate is required, various cleaning solutions are used for cleaning in each process of semiconductor manufacturing. [0003] In semiconductor substrate cleaning solutions, ammonia water-hydrogen peroxide water (SC-1) as an alkaline cleaning solution is usually used to remove particle contamination, and sulfuric acid-hydrogen peroxide water and hydrochlor...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C11D7/26H01L21/08C11D7/60C11D7/50C11D11/00C11D17/08H01L21/02H01L21/304
CPCC11D7/263C11D7/5022H01L21/02052C11D11/0047C11D7/265H01L21/02093H01L21/0206C11D2111/22
Inventor 阿部优美子石川典夫
Owner KANTO CHEM CO INC