Image sensor from CMOS transistors, and manufacturing method

Abstract

Complementary metal-oxide-semiconductor transistor image sensor, comprising a light sensing element, at least one transistor, a first dielectric layer, a ring pillar reflection layer, a second dielectric layer, a protective layer, a material layer, a transparent material layer, a filter Light film and light concentrating element. The photo-sensing element is arranged in the photo-sensing region of the substrate, and the transistor is arranged on the transistor region of the substrate and electrically connected with the photo-sensing element. The first dielectric layer is disposed on the substrate and covers the transistor and the photo-sensing element, and the ring post reflection layer is disposed on the first dielectric layer of the photo-sensing area. The second dielectric layer is arranged on the first dielectric layer outside the ring pillar reflective layer, the protective layer is arranged on the second dielectric layer, and the material layer is arranged on the first dielectric layer inside the ring pillar reflective layer. The transparent material layer is arranged on the material layer, the protective layer and the ring post reflective layer, the filter film is arranged on the transparent material layer, and the light concentrating element is arranged on the filter film corresponding to the light sensing area. The ring column reflection layer is composed of multiple ring column conductor structures connected in series.

Description

Technical field [0001] The invention relates to an optical device and a manufacturing method thereof, in particular to a complementary metal oxide semiconductor transistor image sensor and a manufacturing method thereof. Background technique [0002] Complementary metal oxide semiconductor transistor image sensor (CMOS image sensor, CIS) is compatible with the complementary metal oxide semiconductor transistor process, and can be easily integrated with other peripheral circuits on the same chip, so it can greatly Reduce the cost and power consumption of the image sensor. Therefore, in recent years, in low-cost applications, complementary metal oxide semiconductor transistor image sensors have become a substitute for charge coupled devices (CCD), which has made complementary metal oxide semiconductor transistor image sensors. The importance of measuring instruments is increasing day by day. [0003] U.S. Patent No. 6,861,686B2 (USPat. No. 6,861,686B2) discloses the structure of a ...

AI Technical Summary

Problems solved by technology

However, when the external light passes through the light passageway in the conductive interconnection, if it is not directly transmitted to the photodiode, the light will be absorbed by the dielectric layer or protective layer on the surface of the light passageway, so Reducing the Sensitive Performance of Complementary Metal-Oxide-Semiconductor Transistor Image Sensors

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