Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for manufacturing nanometer paster

A manufacturing method, nanotechnology, applied in the direction of nanotechnology, nanotechnology, pattern surface photolithography process, etc., can solve the problems that cannot meet the needs of the industry, the mask technology and exposure technology are complicated and expensive, and the production speed is low

Inactive Publication Date: 2009-08-12
CONTREL TECH CO LTD
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Among the currently known technologies, there is a scanning electron beam plate printing technology (K.C.Beard, T.Qi.M.R.Dawson, B.Wang.C.Li, Nature 368, 604 (1994).), with 10 nanometers resolution; however, since this technology is arranged in series in the form of point by point, its production speed is extremely low and cannot meet the needs of mass production
Another technology is X-ray plate printing technology (M.Godinot and M.Mahboubi, C.R.Acad.Sci.Ser.II Mec.Phys.Chim.Chim.Sci.Terre Univers.319, 357(1994); M.Godinot, in Anthropoid Origins, J.G.Fleagle and R.F.Kay, Eds. (Plenum, New York, 1994), pp.235-295.), with a resolution of 20 nanometers, is a mode of contact transfer, which can have High productivity; however, its photomask technology and exposure technology are very complicated and expensive, which also cannot meet the needs of the industry
Also, there is a plate printing technique (E.L.Simonsand D.T.Rasmussen, Proc.Nati.Acad.Sci.U.S.A.91, 9946 (1994); Evol.Anthropol.3, 128 (1994)) of a proximity scanning probe, which has 10 Nanometer resolution is an earlier technology; this technology cannot meet the industrial mass production and low cost requirements

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for manufacturing nanometer paster
  • Method for manufacturing nanometer paster
  • Method for manufacturing nanometer paster

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] In order to describe the characteristics of the present invention in detail, the following three preferred embodiments are given and described as follows in conjunction with the accompanying drawings:

[0035] see Figure 1 to Figure 5 , a method for manufacturing nano stickers provided by the first preferred embodiment of the present invention includes the following steps:

[0036] a) In a vacuum environment, prepare a substrate 11 and a mold 13, the mold 13 is in the shape of a transparent plate and is located above the substrate 11, and the bottom of the mold 13 has a pressing surface 14, and the surface of the pressing surface 14 is provided with Nano embossing 15, the surface of the nano embossing 15 is provided with a layer of release agent 17, its state is as figure 1 shown;

[0037] b) A layer of liquid embossing layer 19 is covered on the substrate 11, which is a polymer in this embodiment. The embossing layer 19 can be cured after being irradiated by ultravi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a nanometer paster preparing method, which comprises the following steps: a) preparing one base plate and one die in the vacuum environment, wherein at least one of the base plate and die is clarity; the die is on base plate, which has one pressing surface; the pressing surface is installed nanometer emboss; the nanometer emboss installs release agent; b) the base plate is covered with liquid coining inlay which can be irradiated by ultraviolet light and then cure; c) the pressing surface of die presses base plate; the coining inlay is filled between nanometer emboss and base plate; d) ultraviolet irradiation makes ultraviolet transmit die or base plate to be clarity; irradiating the pressing inlay makes the pressing inlay cure; e) demoulding, the die is moved away the base plate; the pressing inlay forms line in respect of nanometer emboss; the pressing inlay is the nanometer paster.

Description

technical field [0001] The present invention is related to nanotechnology, in particular to a method for manufacturing nano stickers that can meet the requirements of industrial mass production and low cost. Background technique [0002] By the way, in the technology of manufacturing nano stickers, Lithography Techniques are currently used to meet the needs of mass production and low prices. Among them, technologies with a line width of less than 50 nanometers can meet the requirements of future semiconductor integrated circuits, Electronic commercialization, optoelectronic industry, and manufacturing needs of magnetic nano-devices. [0003] Among the currently known technologies, there is a scanning electron beam plate printing technology (K.C.Beard, T.Qi.M.R.Dawson, B.Wang.C.Li, Nature 368, 604 (1994).), with 10 nanometers resolution; however, since this technology is arranged in series in a point-by-point manner, its production speed is extremely low and cannot meet the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): B29C59/02B29C41/12B29D15/00
CPCB82Y10/00G03F7/0002B82Y40/00
Inventor 赵治宇谢文俊
Owner CONTREL TECH CO LTD