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Process for preparing conductive zinc oxide crystal whisker and special apparatus thereof

A conductive zinc oxide and zinc oxide whisker technology, which is applied in chemical instruments and methods, zinc oxide/zinc hydroxide, single crystal growth, etc., can solve the problems of low conductivity, leakage, and inability to become a charge, so as to increase the conductivity performance, high conductivity, and the effect of preventing electrostatic hazards

Inactive Publication Date: 2009-08-12
SOUTHWEST JIAOTONG UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

As far as the ordinary four-needle ZnO whisker is concerned, it can form a network when added to the matrix as a semiconductor material, but it cannot be an effective channel for charge leakage due to its low conductivity.

Method used

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  • Process for preparing conductive zinc oxide crystal whisker and special apparatus thereof
  • Process for preparing conductive zinc oxide crystal whisker and special apparatus thereof
  • Process for preparing conductive zinc oxide crystal whisker and special apparatus thereof

Examples

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Embodiment 2-17

[0023] Fig. 1 shows, each embodiment of the present invention all adopts the special-purpose device of identical conductive zinc oxide whisker preparation method, and it comprises high-temperature furnace 3, reaction tube 5, is placed in the reaction tube 5 and dresses four pin-shaped zinc oxide whisker Reactor boat 6 for feedstock 7. One end of the reaction tube 5 is connected with an air outlet pipe 4 and an inlet pipe 8, and this end of the reaction tube 5 stretches out of the high temperature furnace 3, and the working area of ​​the reaction tube 5 stretches into the high temperature furnace 3. The reaction boat 6 is made of quartz, ceramics or stainless steel, and round holes with a diameter of 1-5mm are arranged around and at the bottom. The high temperature furnace 3 selects a high temperature furnace with a temperature control device 1 and a thermocouple 2 for use. It is convenient to monitor and control the temperature in the furnace.

[0024] The conditions and par...

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Abstract

A method for preparing conductive zinc oxide whiskers and its special device. The steps of the method are: a. Preparation of composite four-needle zinc oxide whiskers: 0.5-20 parts by weight of Al2O3, nano-Al2O3 or the same weight of Al3+ Disperse other aluminum-containing substances in 50-200ml of water or ethanol or acetone solvent to form a dispersion system of aluminum-containing substances, and then spray this system evenly on the surface of 80-99.5 parts of ordinary four-needle zinc oxide whiskers, and dry it; b. Firing: put the composite four-needle-shaped zinc oxide whisker prepared in step a into a reaction tube at a temperature of 600-1600° C., pass through a reducing gas and keep it warm for 5-240 minutes. The prepared conductive zinc oxide whiskers have a resistivity as low as 103-104Ω.cm and a consistent conductivity; they can be conveniently added to polymer materials as conductive additives, effectively and permanently preventing electrostatic hazards of polymer materials.

Description

Technical field [0001] The invention relates to a method for preparing conductive zinc oxide whiskers and a special device thereof. Background technique [0002] Due to the extensive application of polymer materials, electrostatic hazards have increasingly become an unavoidable problem. In order to effectively prevent electrostatic hazards, the most feasible way is to add conductive materials to polymer materials to improve their conductivity. In order to form long-lasting conductivity, inorganic materials are the best choice as conductive additives. Theoretically speaking, inorganic materials capable of preventing electrostatic hazards mainly include inorganic salts, inorganic semiconductors and metal conductors. Inorganic salts are KCl, NaCl, K 2 SO 4 、KNO 3 They are insoluble in organic materials and highly corrosive, and their applications are relatively limited; inorganic semiconductors are mainly represented by inorganic semiconductor oxides and carbon black: thei...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/62C01G9/02
Inventor 楚珑晟周祚万刘菁菁刘国梅易锦黄象贤刘志农
Owner SOUTHWEST JIAOTONG UNIV