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Method for measuring triplet state exciton diffusion length and energy transfer length

A technology of triplet excitons and energy transfer, applied in the direction of semiconductor/solid-state device testing/measurement, measuring electricity, measuring devices, etc.

Inactive Publication Date: 2009-08-12
JINAN UNIVERSITY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, how to obtain the triplet exciton diffusion length and energy transfer length in OLEDs doped with phosphorescent dyes has not been reported yet.

Method used

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  • Method for measuring triplet state exciton diffusion length and energy transfer length
  • Method for measuring triplet state exciton diffusion length and energy transfer length

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Embodiment Construction

[0019] The present invention will be described in further detail below in conjunction with the embodiments and the accompanying drawings, but the embodiments of the present invention are not limited thereto.

[0020] Such as figure 1 As shown, the structure of the phosphorescent OLED is anode, hole transport layer, host material and fluorescent dye layer (DCM1: Alq3), host material layer (Alq3), host material and phosphorescent dye layer (PtOEP: Alp3), electron transport layer (Alq3) and cathode. The invention uses ITO conductive glass as the anode, TPD as the hole transport layer, Alq3 as the main material layer and the electron transport layer, and Al as the cathode. In order to better realize the present invention, the thickness of the hole transport layer is 30nm, the thickness of the host material and the fluorescent dye layer is 10nm, and the thickness of the host material and the phosphorescent dye layer is 10nm. The thickness of the host material layer is X nm, and t...

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Abstract

The invention provides a method for measuring the diffusion length and energy transfer length of triplet excitons, which includes manufacturing phosphorescent organic light-emitting diodes with different thicknesses of host material layers; Diode, detect the relationship between the emission intensity of the light-emitting layer and the thickness of the space isolation layer, and obtain the diffusion length of the triplet excitons; under the condition of the same current density, continuously replace the phosphorescent organic light-emitting diodes to detect the emission intensity of the light-emitting layer, The energy transfer length for triplet excitons is derived. The invention has important guiding significance for the design of phosphorescent organic light-emitting diodes, the selection and matching of materials, the optimization of devices and the improvement of luminous efficiency.

Description

technical field [0001] The invention relates to the field of light-emitting display materials and components, in particular to a method for measuring the diffusion length and energy transfer length of triplet excitons. Background technique [0002] Organic light-emitting devices or organic light-emitting diodes (OLEDs) are high-brightness, wide-view, fully cured electrode light-emitting diodes. Compared with liquid crystal displays (LCDs), they have the following advantages: (1) OLEDs have high luminous efficiency and high brightness. Large; (2) There are many organic light-emitting materials, cheap, and easy to produce on a large scale and in a large area, realizing ultra-thin, large-area flat panel display; (3) The luminous color ranges from infrared to ultraviolet, covering the entire visible light, and it is convenient to realize full-color display (4) The organic material has good mechanical properties and is easy to process and form; (5) The driving voltage is low, mat...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66H01L51/56G01R31/00
Inventor 刘彭义武春红吴敬张靖磊
Owner JINAN UNIVERSITY
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